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BSO080P03S, BSO119N3S, BSO130N03MS G

Table of contents:
Info of BSO080P03S
Info of BSO119N3S
Info of BSO130N03MS G

BSO080P03S, BSO119N3S, BSO130N03MS G Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:08+

BSO080P03S, BSO119N3S, BSO130N03MS G Picture

BSO080P03S, BSO119N3S, BSO130N03MS G Datasheet download

Five Points

Part Number: BSO080P03S

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: SOP8

D/C: 08+

Description: MOSFET P-CH 30V 12.6A DSO-8

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BSO080P03S Parameters

Technical/Catalog Information	BSO080P03S
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12.6A
Rds On (Max) @ Id, Vgs	8 mOhm @ 14.9A, 10V
Input Capacitance (Ciss) @ Vds	5890pF @ 25V
Power - Max	1.79W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	136nC @ 10V
Package / Case	DSO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO080P03S BSO080P03S

BSO080P03S Maximum Ratings

Parameter	Symbol	Conditions	Values		Unit
Parameter	Symbol	Conditions	10 secs	steady state	Unit
Continuous drain current	I_D	T_A=25 °C¹⁾	-14.9	-12.6	A
Continuous drain current	I_D	T_A=70 °C¹⁾	-11.9	-10	A
Pulsed drain current, one channel active	I_Dpulse	T_A=25 °C²⁾	-60		A
Avalanche energy, single pulse	E_AS	I D=-9.1 A, RGS=25	248		mJ
Reverse diode dv/dt	dv/dt	I_D=-9.1 A, V_DS=20 V, di /dt =-200 A/s, T _j,max=150 °C	-6		kV/s
Gate source voltage	V_GS		±25		V
Power dissipation	P_tot	T_A=25 °C¹)	2.36	1.56	W
Operating temperature	T _j , T _stg		-55 ... +150		°C
IEC climatic category, DIN IEC 68-1			55/150/56		°C

BSO080P03S Features

• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated
• dv /dt rated
• Ideal for fast switching buck converter

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