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ID=-9.1 A, VDS=20 V, di /dt =-200 A/s, T j,max=150 °C
6
kV/s
Gate source voltage
VGS
±25
V
Power dissipation
Ptot
TA=25 °C1)
2.5
1.56
W
Operating temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56
°C
BSO200N03S Features
• Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC1 for target applications • N-channel • Logic level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Avalanche rated • dv /dt rated