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BSO0803S, BSO080P3S, BSO094N03S

Table of contents:
Info of BSO0803S
Info of BSO080P3S
Info of BSO094N03S

BSO0803S, BSO080P3S, BSO094N03S Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:04+

BSO0803S, BSO080P3S, BSO094N03S Datasheet download

Five Points

Part Number: BSO0803S

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: SOP8

D/C: 04+

Description: MOSFET N-CH 30V 10A DSO-8

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BSO094N03S Parameters

Technical/Catalog Information	BSO094N03S
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	9.1 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	2300pF @ 15V
Power - Max	1.56W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 5V
Package / Case	DSO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSO094N03S BSO094N03S

BSO094N03S Maximum Ratings

Parameter	Symbol	Conditions	Values		Unit
Parameter	Symbol	Conditions	10 secs	steady state	Unit
Continuous drain current	I_D	T_A=25 °C¹⁾	13	10	A
Continuous drain current	I_D	T_A=70 °C¹⁾	10	8.3	A
Pulsed drain current, one channel active	I_Dpulse	T_A=25 °C²⁾	52		A
Avalanche energy, single pulse	E_AS	I D=-9.1 A, RGS=25	86		mJ
Reverse diode dv/dt	dv/dt	I_D=-9.1 A, V_DS=20 V, di /dt =-200 A/s, T _j,max=150 °C	6		kV/s
Gate source voltage	V_GS		±25		V
Power dissipation	P_tot	T_A=25 °C¹)	2.5	1.56	W
Operating temperature	T _j , T _stg		-55 ... +150		°C
IEC climatic category, DIN IEC 68-1			55/150/56		°C

BSO094N03S Features

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC¹for target applications
• N-channel
• Logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Very low on-resistance R_DS(on)• Avalanche rated
• dv /dt rated

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