MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:03/04+
BSO203SP, BSO204P, BSO207P Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: SOP8
D/C: 03/04+
Description: MOSFET DUAL P-CH 20V 5.7A 8-SOIC
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PDF/DataSheet Download
Datasheet: BSO203SP
File Size: 94387 KB
Manufacturer: INFINEON [Infineon Technologies AG]
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PDF/DataSheet Download
Datasheet: BSO204P
File Size: 84242 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSO207P
File Size: 90606 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | BSO203SP |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 21 mOhm @ 9A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 2265pF @ 15V |
| Power - Max | 2.35W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 50.4nC @ 4.5V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSO203SP BSO203SP BSO203SPINCT ND BSO203SPINCTND BSO203SPINCT |
|
Parameter |
Symbol |
Values |
Unit | |
|
Continuous drain current TA=25°C TA=70°C |
ID |
-9 |
A | |
|
Pulsed drain current TA=25°C |
I Dpulse |
-36 | ||
|
Avalanche energy, single pulse ID=12.7 A , VDD=25V, RGS=25 |
EAS |
97 |
mJ | |
|
Reverse diode dv/dt IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C |
dv/dt |
-6 |
kV/s | |
|
Gate source voltage |
VGS |
±12 |
V | |
|
Power dissipation |
Ptot |
2.35 |
W | |
|
Operating and storage temperature |
T j , T stg |
-55 ... +150 |
°C | |
|
IEC climatic category, DIN IEC 68-1 |
55/150/56 |
|||
| Technical/Catalog Information | BSO204P |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 7A |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 7A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1513pF @ 15V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 35.8nC @ 4.5V |
| Package / Case | SO-8 |
| FET Feature | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSO204P BSO204P BSO204PINTR ND BSO204PINTRND BSO204PINTR |
|
Parameter |
Symbol |
Values |
Unit | |
|
Continuous drain current TA=25°C TA=70°C |
ID |
-7 |
A | |
|
Pulsed drain current TA=25°C |
I Dpulse |
-28 | ||
|
Avalanche energy, single pulse ID=12.7 A , VDD=25V, RGS=25 |
EAS |
63 |
mJ | |
|
Reverse diode dv/dt IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C |
dv/dt |
-6 |
kV/s | |
|
Gate source voltage |
VGS |
±12 |
V | |
|
Power dissipation |
Ptot |
2 |
W | |
|
Operating and storage temperature |
T j , T stg |
-55 ... +150 |
°C | |
|
IEC climatic category, DIN IEC 68-1 |
55/150/56 |
|||
| Technical/Catalog Information | BSO207P |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 5.7A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 5.7A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1013pF @ 15V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 23.4nC @ 4.5V |
| Package / Case | SO-8 |
| FET Feature | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSO207P BSO207P BSO207PINTR ND BSO207PINTRND BSO207PINTR |
|
Parameter |
Symbol |
Values |
Unit | |
|
Continuous drain current TA=25°C TA=70°C |
ID |
-5.7 |
A | |
|
Pulsed drain current TA=25°C |
I Dpulse |
-22.8 | ||
|
Avalanche energy, single pulse ID=12.7 A , VDD=25V, RGS=25 |
EAS |
44 |
mJ | |
|
Reverse diode dv/dt IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C |
dv/dt |
-6 |
kV/s | |
|
Gate source voltage |
VGS |
±12 |
V | |
|
Power dissipation |
Ptot |
2 |
W | |
|
Operating and storage temperature |
T j , T stg |
-55 ... +150 |
°C | |
|
IEC climatic category, DIN IEC 68-1 |
55/150/56 |
|||
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