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BSO2N604L, BSO300N03S, BSO301SP

Table of contents:
Info of BSO2N604L
Info of BSO300N03S
Info of BSO301SP

BSO2N604L, BSO300N03S, BSO301SP Selling Leads, Datasheet

MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:08/

BSO2N604L, BSO300N03S, BSO301SP Datasheet download

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Part Number: BSO300N03S

Category: Discrete Semiconductor Products

MFG: Infineon Technologies (VA)

Package Cooled: SOP8

D/C: 08/

Description: MOSFET P-CH 30V 12.6A DSO-8

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BSO300N03S Parameters

Technical/Catalog Information	BSO300N03S
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5.7A
Rds On (Max) @ Id, Vgs	30 mOhm @ 7.2A, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 15V
Power - Max	1.56W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.6nC @ 5V
Package / Case	DSO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSO300N03S BSO300N03S BSO300N03SINTR ND BSO300N03SINTRND BSO300N03SINTR

BSO300N03S Maximum Ratings

Parameter	Symbol	Conditions	Values		Unit
Parameter	Symbol	Conditions	10 secs	steady state	Unit
Continuous drain current	I_D	T_A=25 °C¹⁾	7.2	5.7	A
Continuous drain current	I_D	T_A=70 °C¹⁾	5.8	4.6	A
Pulsed drain current, one channel active	I_Dpulse	T_A=25 °C²⁾	29		A
Avalanche energy, single pulse	E_AS	I D=-9.1 A, RGS=25	10		mJ
Reverse diode dv/dt	dv/dt	I_D=-9.1 A, V_DS=20 V, di /dt =-200 A/s, T _j,max=150 °C	6		kV/s
Gate source voltage	V_GS		±25		V
Power dissipation	P_tot	T_A=25 °C¹)	2.5	1.56	W
Operating temperature	T _j , T _stg		-55 ... +150		°C
IEC climatic category, DIN IEC 68-1			55/150/56		°C

BSO300N03S Features

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC¹for target applications
• N-channel
• Logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Very low on-resistance R_DS(on)• Avalanche rated
• dv /dt rated

BSO301SP Parameters

Technical/Catalog Information	BSO301SP
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12.6A
Rds On (Max) @ Id, Vgs	8 mOhm @ 14.9A, 10V
Input Capacitance (Ciss) @ Vds	5890pF @ 25V
Power - Max	1.79W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	136nC @ 10V
Package / Case	DSO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Request Inventory Verification
RoHS Status	Request Inventory Verification
Other Names	BSO301SP BSO301SP BSO301SPINDKR ND BSO301SPINDKRND BSO301SPINDKR

BSO301SP Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_A=25°C T_A=70°C	I_D	-14.9 -11.9	A
Pulsed drain current T_A=25°C	I_Dpulse	-59.6	A
Avalanche energy, single pulse I_D=12.7 A , V_DD=25V, R_GS=25	E_AS	248	mJ
Reverse diode dv/dt I_S=12.7A, V_DS=24V, di/dt=200A/s, T_jmax=150°C	dv/dt	-6	kV/s
Gate source voltage	V_GS	±20	V
Power dissipation T_A=25°C	P_tot	2.5	W
Operating and storage temperature	T _j , T _stg	-55 ... +150	°C
IEC climatic category, DIN IEC 68-1		55/150/56

BSO301SP Features

• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching buck converter

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