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BSO200P03S, BSO201SP, BSO203P

Table of contents:
Info of BSO200P03S
Info of BSO201SP
Info of BSO203P

BSO200P03S, BSO201SP, BSO203P Selling Leads, Datasheet

MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:04+

BSO200P03S, BSO201SP, BSO203P Datasheet download

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Part Number: BSO200P03S

Category: Discrete Semiconductor Products

MFG: Infineon Technologies (VA)

Package Cooled: SOP8

D/C: 04+

Description: MOSFET P-CH 20V 14.9A 8-SOIC

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BSO200P03S Parameters

Technical/Catalog Information	BSO200P03S
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	7.4A
Rds On (Max) @ Id, Vgs	20 mOhm @ 9.1A, 10V
Input Capacitance (Ciss) @ Vds	2330pF @ 25V
Power - Max	1.56W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	54nC @ 10V
Package / Case	DSO-8
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO200P03S BSO200P03S

BSO200P03S Maximum Ratings

Parameter	Symbol	Conditions	Values		Unit
Parameter	Symbol	Conditions	10 secs	steady state	Unit
Continuous drain current	I_D	T_A=25 °C¹⁾	-9.1	-7.4	A
Continuous drain current	I_D	T_A=70 °C¹⁾	-7.3	-5.9	A
Pulsed drain current, one channel active	I_Dpulse	T_A=25 °C²⁾	-37		A
Avalanche energy, single pulse	E_AS	I D=-9.1 A, RGS=25	98		mJ
Reverse diode dv/dt	dv/dt	I_D=-9.1 A, V_DS=20 V, di /dt =-200 A/s, T _j,max=150 °C	-6		kV/s
Gate source voltage	V_GS		±25		V
Power dissipation	P_tot	T_A=25 °C¹)	2.36	1.56	W
Operating temperature	T _j , T _stg		-55 ... +150		°C
IEC climatic category, DIN IEC 68-1			55/150/56		°C

BSO200P03S Features

• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated
• dv /dt rated
• Ideal for fast switching buck converter

BSO201SP Parameters

Technical/Catalog Information	BSO201SP
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	14.9A
Rds On (Max) @ Id, Vgs	8 mOhm @ 14.9A, 4.5V
Input Capacitance (Ciss) @ Vds	5962pF @ 15V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	128nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Request Inventory Verification
RoHS Status	Request Inventory Verification
Other Names	BSO201SP BSO201SP BSO201SPINCT ND BSO201SPINCTND BSO201SPINCT

BSO201SP Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_A=25°C T_A=70°C	I_D	-14.9 -11.9	A
Pulsed drain current T_A=25°C	I_Dpulse	-59.6	A
Avalanche energy, single pulse I_D=12.7 A , V_DD=25V, R_GS=25	E_AS	248	mJ
Reverse diode dv/dt I_S=12.7A, V_DS=24V, di/dt=200A/s, T_jmax=150°C	dv/dt	-6	kV/s
Gate source voltage	V_GS	±12	V
Power dissipation T_A=25°C	P_tot	2	W
Operating and storage temperature	T _j , T _stg	-55 ... +150	°C
IEC climatic category, DIN IEC 68-1		55/150/56

BSO201SP Features

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated

BSO203P Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_A=25°C T_A=70°C	I_D	-8.2 -6.6	A
Pulsed drain current T_A=25°C	I_Dpulse	-32.8	A
Avalanche energy, single pulse I_D=12.7 A , V_DD=25V, R_GS=25	E_AS	97	mJ
Reverse diode dv/dt I_S=12.7A, V_DS=24V, di/dt=200A/s, T_jmax=150°C	dv/dt	-6	kV/s
Gate source voltage	V_GS	±12	V
Power dissipation T_A=25°C	P_tot	2	W
Operating and storage temperature	T _j , T _stg	-55 ... +150	°C
IEC climatic category, DIN IEC 68-1		55/150/56

BSO203P Features

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated

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