BSO052N03S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 5.2 mOhms
Package / Case : DSO-8


Features:

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC¹ for target applications
• N-channel
• Logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Very low on-resistance R_DS(on)
• Avalanche rated
• dv /dt rated


Specifications

Parameter	Symbol	Conditions	Values		Unit
			10 secs	steady state
Continuous drain current	ID	TA=25 °C1)	17	14	A
		TA=70 °C1)	14	11
Pulsed drain current, one channel active	I Dpulse	TA=25 °C2)	68		A
Avalanche energy, single pulse	EAS	I D=-9.1 A, RGS=25	380		mJ
Reverse diode dv/dt	dv/dt	ID=-9.1 A, VDS=20 V, di /dt =-200 A/s, T j,max=150 °C	6		kV/s
Gate source voltage	VGS		±25		V
Power dissipation	Ptot	TA=25 °C1)	2.5	1.56	W
Operating temperature	T j , T stg		-55 ... +150		°C
IEC climatic category, DIN IEC 68-1			55/150/56		°C

Parameters:

Technical/Catalog Information	BSO052N03S
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	5.2 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	5530pF @ 15V
Power - Max	1.56W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	43nC @ 5V
Package / Case	DSO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSO052N03S BSO052N03S BSO052N03SINCT ND BSO052N03SINCTND BSO052N03SINCT