BLW96, BLW97, BLW98 Selling Leads, Datasheet
MFG:PHI Package Cooled:N/A D/C:N.A
BLW96, BLW97, BLW98
- Table of contents:
Info of BLW96
Info of BLW97
Info of BLW98
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About BLW96
PDF/DataSheet Download
Datasheet: BLW96
File Size: 91748 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About BLW97
PDF/DataSheet Download
Datasheet: BLW97
File Size: 75581 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW98
PDF/DataSheet Download
Datasheet: BLW98
File Size: 82216 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLW96 General Description
N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups.
The transistor has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.
The transistor has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW96 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBSM | max. | 110v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 55v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC(AV) | max. | 12 A | ||
| (peak value); f > 1 MHz | ICM | max. | 40 A | ||
| R.F. power dissipation | |||||
|
(f > 1 MHz); Tmb =45 °C |
P(r.f.) | max. | 340 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW96 Connection Diagram
BLW97 General Description
N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band.
The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is made to withstand severe load-mismatch conditions. All leads are isolated from the flange.
The transistors are supplied in matched hFE groups.
The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is made to withstand severe load-mismatch conditions. All leads are isolated from the flange.
The transistors are supplied in matched hFE groups.
BLW97 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBSM | max. | 65v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 33v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC(AV) | max. | 15 A | ||
| (peak value); f > 1 MHz Total d.c. power dissipation at Th =25°C |
ICM Ptot(d.c.) |
max. max. |
20 A 190W |
||
| R.F. power dissipation | |||||
| f > 1 MHz; Tmb = 25 °C | Ptot (r.f.) | max. | 230 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW97 Connection Diagram
BLW98 General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems.
BLW98 Maximum Ratings
| Collector-base voltage (open emitter)(peak value); VBE =0 open base |
VCBSM | max. | 50 | ||
| Collector-emitter voltage (open base) | Vceo | max. | 27v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 3.5v | ||
| Collector current | |||||
| d.c. or average | IC | max. | 2 A | ||
| (peak value); f > 1 MHz | ICM | max. | 4 A | ||
| Total power dissipation | |||||
|
at Tmb = 94 °C; f > 1 MHz |
Ptot (r.f.) | max. | 21.5W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW98 Features
* diffused emitter ballasting resistors for an optimum temperature profile;
* gold sandwich metallization ensures excellent reliability.
* gold sandwich metallization ensures excellent reliability.
BLW98 Connection Diagram
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