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SPW11N60CFD, SPW11N60S5, SPW11N80C3

Table of contents:
Info of SPW11N60CFD
Info of SPW11N60S5
Info of SPW11N80C3

SPW11N60CFD, SPW11N60S5, SPW11N80C3 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF D/C:0821+

SPW11N60CFD, SPW11N60S5, SPW11N80C3 Datasheet download

Five Points

Part Number: SPW11N60CFD

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: INF

D/C: 0821+

Description: MOSFET N-CH 800V 11A TO-247

Price Break

1
10
100
1000

Unit Price

3.74000
3.42800
2.61770
1.68278

Extended Price

3.74
34.28
261.77
1682.78

(All prices are in USD) Prices for reference only

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SPW11N60CFD Parameters

Technical/Catalog Information	SPW11N60CFD
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	440 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	64nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPW11N60CFD SPW11N60CFD SPW11N60CFDIN ND SPW11N60CFDINND SPW11N60CFDIN

SPW11N60CFD Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	I_D	11 7	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	28	A
Avalanche energy, single pulse I_D= 5.5A, V_DD=50V	E_AS	340	mJ
Avalanche energy, repetitive t_AR limited by T_jmax1) I_D=11A, V_DD=50V	E_AR	0.6	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	11	A
Reverse diode dv/dt I_S=11A, V_DS=480V, T_j=125°C	dv/dt	40	V/ns
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation TC = 25 °C	P_tot	125	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

SPW11N60CFD Features

· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery chargeA

SPW11N60S5 Parameters

Technical/Catalog Information	SPW11N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1460pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	54nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPW11N60S5 SPW11N60S5 SPW11N60S5IN ND SPW11N60S5INND SPW11N60S5IN

SPW11N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	I_D	11 7	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	22	A
Avalanche energy, single pulse I_D= 5.5A, V_DD=50V	E_AS	340	mJ
Avalanche energy, repetitive t_AR limited by T_jmax1) I_D=11A, V_DD=50V	E_AR	0.6	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	11	A
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation TC = 25 °C	P_tot	125	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

SPW11N60S5 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

SPW11N80C3 Parameters

Technical/Catalog Information	SPW11N80C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	450 mOhm @ 7.1A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 100V
Power - Max	156W
Packaging	Tube
Gate Charge (Qg) @ Vgs	85nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPW11N80C3 SPW11N80C3 SPW11N80C3IN ND SPW11N80C3INND SPW11N80C3IN

SPW11N80C3 General Description

The SPW11N80C3 is designed as one kind of Cool MOS-power transistor which has four points of features such as:(1)new revolutionary high voltage techn-ology;(2)ultra low gate charge;(3)periodic avalanche rated;(4)extreme dv/dt rated. And it is producted by the Infineon technologies.

The absolute maximum ratings of the SPW11N80C3 can be summarized as:(1)continuous drain current Tc=25 °C:11 A;(2)continuous drain current Tc=100 °C:7.1 A;(3)pulsed drain current, tp limited by Tjmax:33 A;(4)avalanche energy, single pulse ID=2.2 A, VDD=50 V:470 mJ;(5)avalanche energy, repetitive tAR limited by Tjmax ID=11 A, VDD=50 V:0.2 mJ;(6)operating and storage temperature:-55 to +150 °C;(7)power dissipation, Tc=25°C:156 W;(8)gate source voltage AC (f >1Hz):±30 V;(9)gate source voltage:±20 V;(10)thermal resistance, junction-case:0.8 K/W;(11)thermal resistance, junction-ambient, leaded:62 K/W. If you want to know more information such as the electrical characteristics about the SPW11N80C3, please download the datasheet in www.seekic.com or www.chinaicmart.com.

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