MOSFET COOL MOS N-CH 560V 11.6A
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Features: • New revolutionary high voltage technology• Ultra low gate charge• Pe...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 560 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 11.6 A | ||
Resistance Drain-Source RDS (on) : | 0.38 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Parameter |
Symbol |
Value |
Unit |
Continuous drain current TC = 25 °C TC = 100 °C |
ID |
11.6 7 |
A |
Pulsed drain current, tp limited by Tjmax |
ID puls |
34.8 | |
Avalanche energy, single pulse ID= 5.5A, VDD=50V |
EAS |
340 |
mJ |
Avalanche energy, repetitive tAR limited by Tjmax1) ID=11.6A, VDD=50V |
EAR |
0.6 | |
Avalanche current, repetitive tAR limited by Tjmax |
IAR |
11.6 |
A |
Reverse diode dv/dt IS=11.6A, VDS=480V, Tj=125°C |
dv/dt |
6 |
V/ns |
Gate source voltage static |
VGS |
±20 |
V |
Gate source voltage AC (f >1Hz) |
VGS |
±30 | |
Power dissipation TC = 25 °C |
Ptot |
125 |
W |
Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
Technical/Catalog Information | SPW12N50C3 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 560V |
Current - Continuous Drain (Id) @ 25° C | 11.6A |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 7A, 10V |
Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
Power - Max | 125W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 49nC @ 10V |
Package / Case | TO-247 |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | SPW12N50C3 SPW12N50C3 SPW12N50C3IN ND SPW12N50C3INND SPW12N50C3IN |