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SPW11N60C2

Features: • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitances• Improved noise immunitySpecifications Parameter Symbol Value Unit Continuous drain c...

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SPW11N60C2: Features: • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitances• Imp...

SPW11N60C2 Data Sheet

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Part Number:
SPW11N60C2
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/11/22

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Product Details

Description



Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
11
7
A
Pulsed drain current, tp limited by Tjmax
ID puls
22
Avalanche energy, single pulse
ID= 5.5A, VDD=50V
EAS
340
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=11A, VDD=50V
EAR
0.6
Avalanche current, repetitive tAR limited by Tjmax
IAR
11
A
Reverse diode dv/dt
IS=11A, VDS=480V, Tj=125°C
dv/dt
6
V/ns
Gate source voltage static
VGS
±20
V
Power dissipation
TC = 25 °C
Ptot
125
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



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