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SPW11N60S5

MOSFET COOL MOS N-CH 600V 11A

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SeekIC No. : 00151439 Detail

SPW11N60S5: MOSFET COOL MOS N-CH 600V 11A

SPW11N60S5 Data Sheet

floor Price/Ceiling Price

US $ 1.45~2.45 / Piece | Get Latest Price
Part Number:
SPW11N60S5
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $2.45
  • $2.18
  • $1.79
  • $1.45
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.38 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.38 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
11
7
A
Pulsed drain current, tp limited by Tjmax
ID puls
22
Avalanche energy, single pulse
ID= 5.5A, VDD=50V
EAS
340
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=11A, VDD=50V
EAR
0.6
Avalanche current, repetitive tAR limited by Tjmax
IAR
11
A
Gate source voltage static
VGS
±20
V
Gate source voltage AC (f >1Hz)

VGS
±30
Power dissipation
TC = 25 °C
Ptot
125
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



Parameters:

Technical/Catalog InformationSPW11N60S5
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1460pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs54nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPW11N60S5
SPW11N60S5
SPW11N60S5IN ND
SPW11N60S5INND
SPW11N60S5IN



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