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Avalanche energy, repetitive tAR limited by Tjmax 1) ID=17A, VDD=50V
EAR
0.5
Avalanche current, repetitive tAR limited by Tjmax
IAR
17
A
Reverse diode d v/d t IS=17A, VDS < VDD, d i/d t=100A/µs, Tjmax=150°C
d v/d t
6
V/ns
Gate source voltage
VGS
±20
V
Power dissipation TC = 25 °C
Ptot
208
W
Operating and storage temperature
Tj,Tstg
-55... +150
W
SPW17N80C2 Features
· New revolutionary high voltage technology · Worldwide best RDS(on) in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme d v/d t rated · Ultra low effective capacitances
Avalanche energy, repetitive tAR limited by Tjmax1) ID=17A, VDD=50V
EAR
0.5
Avalanche current, repetitive tAR limited by Tjmax
IAR
17
A
Gate source voltage static
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation TC = 25 °C
Ptot
208
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
SPW17N80C3 Features
• New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated