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SPW17N80C2, SPW17N80C3, SPW17N80S5

SPW17N80C2, SPW17N80C3, SPW17N80S5 Selling Leads, Datasheet

MFG:Infineon Technologies  Category:Discrete Semiconductor Products  Package Cooled:TO-247  D/C:08+

SPW17N80C3 Picture

SPW17N80C2, SPW17N80C3, SPW17N80S5 Datasheet download

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Part Number: SPW17N80C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO-247

D/C: 08+

Description: MOSFET N-CH 800V 17A TO-247

 

 
 
 
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SPW17N80C2 Suppliers

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  • SPW11N60CFD

  • Vendor: Infineon Pack: TO D/C: 82+& Qty: 9000 Note: New & original/stock  Adddate: 2024-12-25
  • Inquire Now
  • HK Yiding Electronics co,.ltd   China
    Contact: Mr.LISIMON   MSN:LFRZH888@HOTMAIL.COM
    Tel: 086-755-83467300
    Fax: 086-755-82518824
    (14)
  • SPW11N60CFD

  • Vendor: Infineon Qty: 1235  Adddate: 2024-12-25
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  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)

About SPW17N80C2

PDF/DataSheet Download

Datasheet: SPW17N80C2

File Size: 142785 KB

Manufacturer: Infineon Technologies AG

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SPW17N80C3 Suppliers

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  • SPW17N80C3

  • Vendor: Infineon Pack: TO D/C: 06+& Qty: 8000 Note: "SZStock  Adddate: 2024-12-25
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  • JiaYiElectronic   China
    Contact: Ms.bady   MSN:chen-zi-jiao@hotmail.com
    Tel: 0086-0755-82987213
    Fax: 0086-0755-83035984
    (23)
  • SPW17N80C3

  • Vendor: Infineon D/C: 05+&   Adddate: 2024-12-25
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  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • SPW17N80C3X

  • D/C: 08+& Qty: 480 Note: same day shipment  Adddate: 2024-12-25
  • Inquire Now
  • Skyeast Intl. Ltd.   China
    Contact: Mr.RichardLiu  
    Tel: 86--755-83276226
    Fax: 86--755--83215205
    (0)

About SPW17N80C3

PDF/DataSheet Download

Datasheet: SPW17N80C3

File Size: 263808 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

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SPW17N80S5 Suppliers

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  • SPW11N60CFD

  • Vendor: Infineon Pack: TO D/C: 82+& Qty: 9000 Note: New & original/stock  Adddate: 2024-12-25
  • Inquire Now
  • HK Yiding Electronics co,.ltd   China
    Contact: Mr.LISIMON   MSN:LFRZH888@HOTMAIL.COM
    Tel: 086-755-83467300
    Fax: 086-755-82518824
    (14)
  • SPW11N60CFD

  • Vendor: Infineon Qty: 1235  Adddate: 2024-12-25
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)

About SPW11N60

PDF/DataSheet Download

Datasheet: SPW11N60

File Size: 101883 KB

Manufacturer: Siemens Semiconductor Group

Download : Click here to Download

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SPW17N80C2 Maximum Ratings

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID 17
11
A
Pulsed drain current, tp limited by Tjmax ID puls 51
Avalanche energy, single pulse
ID=4A, VDD=50V
EAS 670 mJ
Avalanche energy, repetitive tAR limited by Tjmax
1)
ID=17A, VDD=50V
EAR 0.5
Avalanche current, repetitive tAR limited by Tjmax IAR 17 A
Reverse diode d v/d t
IS=17A, VDS < VDD, d i/d t=100A/µs, Tjmax=150°C
d v/d t 6 V/ns
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 208 W
Operating and storage temperature Tj,Tstg -55... +150 W

SPW17N80C2 Features

· New revolutionary high voltage technology
· Worldwide best RDS(on) in TO 247
· Ultra low gate charge
· Periodic avalanche rated
· Extreme d v/d t rated
· Ultra low effective capacitances

SPW17N80C3 Parameters

Technical/Catalog InformationSPW17N80C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs290 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 2320pF @ 25V
Power - Max208W
PackagingTube
Gate Charge (Qg) @ Vgs177nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPW17N80C3
SPW17N80C3
SPW17N80C3IN ND
SPW17N80C3INND
SPW17N80C3IN

SPW17N80C3 Maximum Ratings

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
17
11
A
Pulsed drain current, tp limited by Tjmax
ID puls
51
Avalanche energy, single pulse
ID= 3.4A, VDD=50V
EAS
670
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=17A, VDD=50V
EAR
0.5
Avalanche current, repetitive tAR limited by Tjmax
IAR
17
A
Gate source voltage static
VGS
±20
V
Gate source voltage AC (f >1Hz)

VGS

±30
Power dissipation
TC = 25 °C
Ptot
208
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C

SPW17N80C3 Features

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 247
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated

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