SPW11N80C3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	ID	11 7.1	A
Pulsed drain current, tp limited by Tjmax	ID puls	33
Avalanche energy, single pulse ID= 2.2A, VDD=50V	EAS	470	mJ
Avalanche energy, repetitive tAR limited by Tjmax1) ID=11A, VDD=50V	EAR	0.2
Avalanche current, repetitive tAR limited by Tjmax	IAR	11	A
Reverse diode dv/dt IS=11A, VDS=480V, Tj=125°C	dv/dt	6	V/ns
Gate source voltage static	VGS	±20	V
Gate source voltage AC (f >1Hz)	VGS	±30
Power dissipation TC = 25 °C	Ptot	156	W
Operating and storage temperature	Tj , Tstg	-55... +150	°C

Description

The SPW11N80C3 is designed as one kind of Cool MOS-power transistor which has four points of features such as:(1)new revolutionary high voltage techn-ology;(2)ultra low gate charge;(3)periodic avalanche rated;(4)extreme dv/dt rated. And it is producted by the Infineon technologies.

The absolute maximum ratings of the SPW11N80C3 can be summarized as:(1)continuous drain current Tc=25 °C:11 A;(2)continuous drain current Tc=100 °C:7.1 A;(3)pulsed drain current, tp limited by Tjmax:33 A;(4)avalanche energy, single pulse ID=2.2 A, VDD=50 V:470 mJ;(5)avalanche energy, repetitive tAR limited by Tjmax ID=11 A, VDD=50 V:0.2 mJ;(6)operating and storage temperature:-55 to +150 °C;(7)power dissipation, Tc=25°C:156 W;(8)gate source voltage AC (f >1Hz):±30 V;(9)gate source voltage:±20 V;(10)thermal resistance, junction-case:0.8 K/W;(11)thermal resistance, junction-ambient, leaded:62 K/W. If you want to know more information such as the electrical characteristics about the SPW11N80C3, please download the datasheet in www.seekic.com or www.chinaicmart.com.

Parameters:

Technical/Catalog Information	SPW11N80C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	450 mOhm @ 7.1A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 100V
Power - Max	156W
Packaging	Tube
Gate Charge (Qg) @ Vgs	85nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPW11N80C3 SPW11N80C3 SPW11N80C3IN ND SPW11N80C3INND SPW11N80C3IN