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SPW32N50C3, SPW35N60C3, SPW35N60CFD

SPW32N50C3, SPW35N60C3, SPW35N60CFD Selling Leads, Datasheet

MFG:Infineon Technologies  Category:Discrete Semiconductor Products  Package Cooled:new in original  D/C:07+

SPW32N50C3 Picture

SPW32N50C3, SPW35N60C3, SPW35N60CFD Datasheet download

Five Points

Part Number: SPW32N50C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: new in original

D/C: 07+

Description: MOSFET N-CHAN 600V 34.1A TO-247

Price Break

1
10
100
1000

Unit Price

7.38000
6.83400
5.19380
3.63569

Extended Price

7.38
68.34
519.38
3635.69

(All prices are in USD) Prices for reference only
Urgent Purchase
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SPW32N50C3 Suppliers

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  • SPW32N50C3

  • Vendor: Infineon Pack: TO Qty: 2458 Note: stock on hand  Adddate: 2024-12-25
  • Inquire Now
  • TCW(HK) electronic limited   China
    Contact: Mr.David   MSN:hongjijia@hotmail.com
    Tel: 86-0755-82817106
    Fax: 86-0755-83012739
    (3)
  • SPW11N60CFD

  • Vendor: Infineon Pack: TO D/C: 82+& Qty: 9000 Note: New & original/stock  Adddate: 2024-12-25
  • Inquire Now
  • HK Yiding Electronics co,.ltd   China
    Contact: Mr.LISIMON   MSN:LFRZH888@HOTMAIL.COM
    Tel: 086-755-83467300
    Fax: 086-755-82518824
    (14)
  • SPW11N60CFD

  • Vendor: Infineon Qty: 1235  Adddate: 2024-12-25
  • Inquire Now
  • weiming   China
    Contact: Mr.zhang   MSN:zhangwm1986@hotmail.com
    Tel: 0086-0755-82766465
    Fax: 0086-0755-82766465
    (1)

About SPW32N50C3

PDF/DataSheet Download

Datasheet: SPW32N50C3

File Size: 263926 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

Related PDF Download

Related Part Number

SPW35N60C3 Suppliers

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  • SPW11N60CFD

  • Vendor: Infineon Pack: TO D/C: 82+& Qty: 9000 Note: New & original/stock  Adddate: 2024-12-25
  • Inquire Now
  • HK Yiding Electronics co,.ltd   China
    Contact: Mr.LISIMON   MSN:LFRZH888@HOTMAIL.COM
    Tel: 086-755-83467300
    Fax: 086-755-82518824
    (14)

About SPW35N60C3

PDF/DataSheet Download

Datasheet: SPW35N60C3

File Size: 235992 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

Related PDF Download

Related Part Number

SPW35N60CFD Suppliers

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  • SPW11N60CFD

  • Vendor: Infineon Pack: TO D/C: 82+& Qty: 9000 Note: New & original/stock  Adddate: 2024-12-25
  • Inquire Now
  • HK Yiding Electronics co,.ltd   China
    Contact: Mr.LISIMON   MSN:LFRZH888@HOTMAIL.COM
    Tel: 086-755-83467300
    Fax: 086-755-82518824
    (14)

About SPW11N60

PDF/DataSheet Download

Datasheet: SPW11N60

File Size: 101883 KB

Manufacturer: Siemens Semiconductor Group

Download : Click here to Download

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Related Part Number

SPW32N50C3 Parameters

Technical/Catalog InformationSPW32N50C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)560V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs110 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 4200pF @ 25V
Power - Max284W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPW32N50C3
SPW32N50C3
SPW32N50C3IN ND
SPW32N50C3INND
SPW32N50C3IN

SPW32N50C3 Maximum Ratings

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
32
20
A
Pulsed drain current, tp limited by Tjmax
ID puls
96
Avalanche energy, single pulse
ID=10A, VDD=50V
EAS
1100
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=20A, VDD=50V
EAR
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
20
A
Gate source voltage static
VGS
±20
V
Gate source voltage AC (f >1Hz)

VGS

±30
Power dissipation
TC = 25 °C
Ptot
284
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C

SPW32N50C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

SPW35N60C3 Parameters

Technical/Catalog InformationSPW35N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C34.6A
Rds On (Max) @ Id, Vgs100 mOhm @ 21.9A, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max313W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPW35N60C3
SPW35N60C3
SPW35N60C3IN ND
SPW35N60C3INND
SPW35N60C3IN

SPW35N60C3 Maximum Ratings

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID

TC=25 °C

34.6
A

TC=100 °C

 21.9

Pulsed drain current1)
ID,pulse

TC=25 °C

103.8
Avalanche energy, single pulse
EAS

ID=17.3 A, VDD=50 V

1500
mJ
Avalanche energy, repetitive t AR1),2)
EAR

ID=34.6 A, VDD=50 V

1.5
Avalanche current, repetitive t AR1)
IAR
 
34.6
A
Drain source voltage slope
dv/dt

ID=34.6 A,
VDS=480 V, T j=125 °C

50
V/ns
Gate source voltage
VGS

static

±20
V

 VGS

AC (f >1 Hz)

 
±30
Power dissipation
Ptot

TC=25 °C

313
W
Operating and storage temperature
Tj , Tstg
 
-55... +150
°C

SPW35N60C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt  rated
• Ultra low effective capacitances
• Improved transconductance

SPW35N60CFD Parameters

Technical/Catalog InformationSPW35N60CFD
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C34.1A
Rds On (Max) @ Id, Vgs118 mOhm @ 21.6A, 10V
Input Capacitance (Ciss) @ Vds 5060pF @ 25V
Power - Max313W
PackagingTube
Gate Charge (Qg) @ Vgs212nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPW35N60CFD
SPW35N60CFD
SPW35N60CFDIN ND
SPW35N60CFDINND
SPW35N60CFDIN

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