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SPW12N50C3, SPW15N60C3, SPW16N50C3

Table of contents:
Info of SPW12N50C3
Info of SPW15N60C3
Info of SPW16N50C3

SPW12N50C3, SPW15N60C3, SPW16N50C3 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF D/C:2008+

SPW12N50C3, SPW15N60C3, SPW16N50C3 Datasheet download

Five Points

Part Number: SPW12N50C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: INF

D/C: 2008+

Description: MOSFET N-CH 560V 16A TO-247

Price Break

1
10
100
1000

Unit Price

3.08000
2.69700
2.31170
1.32440

Extended Price

3.08
26.97
231.17
1324.40

(All prices are in USD) Prices for reference only

Attentive hint

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SPW12N50C3 Parameters

Technical/Catalog Information	SPW12N50C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	560V
Current - Continuous Drain (Id) @ 25° C	11.6A
Rds On (Max) @ Id, Vgs	380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	49nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPW12N50C3 SPW12N50C3 SPW12N50C3IN ND SPW12N50C3INND SPW12N50C3IN

SPW12N50C3 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	I_D	11.6 7	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	34.8	A
Avalanche energy, single pulse I_D= 5.5A, V_DD=50V	E_AS	340	mJ
Avalanche energy, repetitive t_AR limited by T_jmax1) I_D=11.6A, V_DD=50V	E_AR	0.6	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	11.6	A
Reverse diode dv/dt I_S=11.6A, V_DS=480V, T_j=125°C	dv/dt	6	V/ns
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation TC = 25 °C	P_tot	125	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

SPW12N50C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

SPW15N60C3 Parameters

Technical/Catalog Information	SPW15N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	280 mOhm @ 9.4A, 10V
Input Capacitance (Ciss) @ Vds	1660pF @ 25V
Power - Max	156W
Packaging	Tube
Gate Charge (Qg) @ Vgs	63nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPW15N60C3 SPW15N60C3 SPW15N60C3IN ND SPW15N60C3INND SPW15N60C3IN

SPW15N60C3 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	I_D	15 9.4	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	45	A
Avalanche energy, single pulse I_D= 7.5A, V_DD=50V	E_AS	460	mJ
Avalanche energy, repetitive t_AR limited by T_jmax1) I_D=15A, V_DD=50V	E_AR	0.8	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	15	A
Reverse diode dv/dt I_S=15A, V_DS=480V, T_j=125°C	dv/dt	6	V/ns
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation TC = 25 °C	P_tot	156	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

SPW15N60C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

SPW16N50C3 Parameters

Technical/Catalog Information	SPW16N50C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	560V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	280 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	66nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPW16N50C3 SPW16N50C3 SPW16N50C3IN ND SPW16N50C3INND SPW16N50C3IN

SPW16N50C3 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	I_D	16 10	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	48	A
Avalanche energy, single pulse I_D= 8A, V_DD=50V	E_AS	460	mJ
Avalanche energy, repetitive=16A, V_DD=50V	E_AR	0.64	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	16	A
Reverse diode dv/dt I_S=16A, V_DS=480V, T_j=125°C	dv/dt	6	V/ns
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation TC = 25 °C	P_tot	160	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

SPW16N50C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

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