MFG:Semikron Package Cooled:TO-200AB D/C:2009
SKCD06C120I3, SKCD06C120IHD, SKCD09C060I3 Datasheet download
MFG: Semikron
Package Cooled: TO-200AB
D/C: 2009
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Datasheet: SKCD06C120I3
File Size: 220217 KB
Manufacturer: Semikron International
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Datasheet: SKCD06C120IHD
File Size: 259355 KB
Manufacturer: Semikron International
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PDF/DataSheet Download
Datasheet: SKCD09C060I3
File Size: 231865 KB
Manufacturer: Semikron International
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The SKCD11C060I3 (IF =20A, VRRM =600V, Size: 3,3mm X 3,3mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V,optimized for high current density, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, which is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.
The absolute maximum ratings of SKCD11C060I3 are VRRM(@ Tvj =25, IR = 0,1mA)=600V, IF(AV)(@ 80, Tvjmax=150)=18A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=--A/--A, Tvjmax=+150. The electrical characteristics of SKCD11C060I3 are I2t(@ Tvjmax, 10 ms, half sine wave)=--(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1mA(max)/-- mA(max), VF(@ Tvj =25, IF=15A)/(@ Tvj =125, IF=15A)=1,35(TYP)V/1,4(TYP)V and 1,7(max)/--(max)V, V(TO)(@ Tvj =125)=0,8V, rT(@ Tvj =125)=26m. And the thermal characteristics of SKCD11C060I3 are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 24 mm DCB, reference point on copper heatsink close to the chip)=1,93(typ)K/W. The Mechanical Characteristics of SKCD11C060I3 are raster size(3,3*3,3mm), Area total(11,22mm2), Chips/wafer=932(pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
The SKCD06C120IHD (IF =6A, VRRM =1200 V, Size: 2,44mm X2,44 mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V,optimized for high current density, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, which is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.
The absolute maximum ratings of SKCD06C120IHD are VRRM(@ Tvj =25, IR = 0,1mA)=1200V, IF(AV)(@ 80, Tvjmax=150)=8A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=60A/55A, Tvjmax=+150. The electrical characteristics of SKCD06C120IHD are I2t(@ Tvjmax, 10 ms, half sine wave)=15(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1 mA(max)/--, VF(@ Tvj =25, IF=25A)/(@ Tvj =125, IF=25A)=1,5(TYP)V/1,5(TYP)V, V(TO)(@ Tvj =125)=0,92V, rT(@ Tvj =125)=119,8m. And the thermal characteristics of SKCD06C120IHD are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=2,46(typ)K/W. The Mechanical Characteristics of SKCD06C120IHD are raster size(2,44*2,44mm), Area total(5,95mm2), Chips/wafer(1720pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500m).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
The SKCD09C060I3 (IF =20A, VRRM =600V, Size: 2,95mm X2,95 mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V, low forward voltage drop, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, which is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.
The absolute maximum ratings of SKCD09C060I3 are VRRM(@ Tvj =25, IR = 0,1mA)=600V, IF(AV)(@ 80, Tvjmax=150)=15A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=120A/100A, Tvjmax=+150. The electrical characteristics of SKCD09C060I3 are I2t(@ Tvjmax, 10 ms, half sine wave)=50(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1mA(max)/0,5 mA(max), VF(@ Tvj =25, IF=20A)/(@ Tvj =125, IF=20A)=1,35(TYP)V/1,35(TYP)V and 1,6(max)/1,6(max)V, V(TO)(@ Tvj =125)=0,9V, rT(@ Tvj =125)=33m. And the thermal characteristics of SKCD09C060I3 are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=2,11(typ)K/W. The Mechanical Characteristics of SKCD09C060I3 are raster size(2,95*2,95mm), Area total(8,70mm2), Chips/wafer=1171(pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
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