MFG:Semikron Package Cooled:TO-200AB D/C:2009
SKCD09C060IHD, SKCD11C060I3, SKCD11C120I3 Datasheet download
MFG: Semikron
Package Cooled: TO-200AB
D/C: 2009
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Datasheet: SKCD09C060IHD
File Size: 209997 KB
Manufacturer: Semikron International
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PDF/DataSheet Download
Datasheet: SKCD11C060I3
File Size: 125070 KB
Manufacturer: Semikron International
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PDF/DataSheet Download
Datasheet: SKCD11C120I3
File Size: 247995 KB
Manufacturer: Semikron International
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The SKCD09C060IHD (IF =30A, VRRM = 600 V, Size: 2,95mm X 2,95mm, Package: wafer frame) possesses the features of high current density, easy paralleling due to a small forward voltage spread and a positive temperature coefncient, very soft recovery behavior, small switching losses, high ruggedness compatible to thick wire bonding, compatible to standard solder processes, which is typically applicated as freewheeling diode for 600V IGBT.
The absolute maximum ratings of SKCD09C060IHD are VRRM(@ Tvj =25, IR =0,2 mA)=600V, IF(AV)(@ 80, Tvjmax=175)=20A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=185A/160A, Tvjmax=+175. The electrical characteristics of SKCD09C060IHD are I2t(@ Tvj=150, 10 ms, half sine
wave)=128 (max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =150, VRRM)=0,1mA(max)/--, VF(@ Tvj =25, IF=19A)/(@ Tvj =150, IF=19A)=1,35(TYP)V/1.31(TYP)V, V(TO)(@ Tvj =150)=0,85V, rT(@ Tvj =150)=25,1m. And the thermal characteristics of SKCD09C060IHD are Tvj=-40 to +175=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=2,11(typ)K/W. The Mechanical Characteristics of SKCD09C060IHD are raster size(2,95mm X 2,95mm), Area total(8,70 mm2), Chips/wafer(1175 pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
The SKCD11C060I3 (IF =20A, VRRM =600V, Size: 3,3mm X 3,3mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V,optimized for high current density, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, which is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.
The absolute maximum ratings of SKCD11C060I3 are VRRM(@ Tvj =25, IR = 0,1mA)=600V, IF(AV)(@ 80, Tvjmax=150)=18A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=--A/--A, Tvjmax=+150. The electrical characteristics of SKCD11C060I3 are I2t(@ Tvjmax, 10 ms, half sine wave)=--(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1mA(max)/-- mA(max), VF(@ Tvj =25, IF=15A)/(@ Tvj =125, IF=15A)=1,35(TYP)V/1,4(TYP)V and 1,7(max)/--(max)V, V(TO)(@ Tvj =125)=0,8V, rT(@ Tvj =125)=26m. And the thermal characteristics of SKCD11C060I3 are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 24 mm DCB, reference point on copper heatsink close to the chip)=1,93(typ)K/W. The Mechanical Characteristics of SKCD11C060I3 are raster size(3,3*3,3mm), Area total(11,22mm2), Chips/wafer=932(pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
The SKCD11C120I3 (IF =15A, VRRM =1200V, Size: 3,35mm X 3,35mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V,optimized for high current density, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, which is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.
The absolute maximum ratings of SKCD11C120I3 are VRRM(@ Tvj =25, IR = 0,1mA)=1200V, IF(AV)(@ 80, Tvjmax=150)=10A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=110A/--A, Tvjmax=+150. The electrical characteristics of SKCD11C120I3 are I2t(@ Tvjmax, 10 ms, half sine wave)=--(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1mA(max)/-- mA(max), VF(@ Tvj =25, IF=10A)/(@ Tvj =125, IF=10A)=2(TYP)V/1,79(TYP)V and 2,5(max)/2,3(max)V, V(TO)(@ Tvj =125)=1,18V, rT(@ Tvj =125)=62,7m. And the thermal characteristics of SKCD11C120I3 are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 24 mm DCB, reference point on copper heatsink close to the chip)=1,93(typ)K/W. The Mechanical Characteristics of SKCD11C120I3 are raster size(3,35*3,35mm), Area total(11,22mm2), Chips/wafer=932(pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
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