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SKCD23C120I, SKCD23C120I3, SKCD24C060IHD

Table of contents:
Info of SKCD23C120I
Info of SKCD23C120I3
Info of SKCD24C060IHD

SKCD23C120I, SKCD23C120I3, SKCD24C060IHD Selling Leads, Datasheet

MFG:Semikron Package Cooled:TO-200AB D/C:2009

SKCD23C120I, SKCD23C120I3, SKCD24C060IHD Picture

SKCD23C120I, SKCD23C120I3, SKCD24C060IHD Datasheet download

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Part Number: SKCD23C120I

MFG: Semikron

Package Cooled: TO-200AB

D/C: 2009

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SKCD23C120I3 General Description

The SKCD23C120I3 (IF = 30 A, VRRM =1200 V, Size: 6,56mm X3,53 mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V, low forward voltage drop, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, which is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.

The absolute maximum ratings of SKCD23C120I3 are VRRM(@ Tvj =25, IR = 0,1mA)=1200V, IF(AV)(@ 80, Tvjmax=150)=20 A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=--A/250A, Tvjmax=+150. The electrical characteristics of SKCD23C120I3 are I2t(@ Tvjmax, 10 ms, half sine wave)=310(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1 mA(max)/--, VF(@ Tvj =25, IF=25A)/(@ Tvj =125, IF=25A)=2(TYP)V/1,79(TYP)V, V(TO)(@ Tvj =125)=1,18V, rT(@ Tvj =125)=25,2m.And the thermal characteristics of SKCD23C120I3 are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=1, 25(typ)K/W. The Mechanical Characteristics of SKCD23C120I3 are raster size(6, 56*3, 53mm), Area total(23, 16mm2), Chips/wafer(423 pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 pm).

This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.

SKCD23C120I3 Maximum Ratings

SKCD23C120I3 Features

SKCD24C060IHD General Description

The SKCD24C060IHD(IF = 75 A, VRRM = 600 V, Size: 4,9 mm X 4,9 mm, Package: wafer frame) possesses the features of high current density, easy paralleling due to a small forward voltage spread and a positive temperature coefncient, very soft recovery behavior, small switching losses, high ruggedness compatible to thick wire bonding, compatible to standard solder processes, which is typically applicated as freewheeling diode for 600V IGBT.

The absolute maximum ratings of SKCD24C060IHDS are VRRM(@ Tvj =25, IR = 0,2 mA)=600V, IF(AV)(@ 80, Tvjmax=175)=45 A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=490 A/395 A, Tvjmax=+175.

The electrical characteristics of SKCD24C060IHD are I2t(@ Tvj=150, 10 ms, half sine wave)=780(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =150, VRRM)=0,2 mA(max)/--, VF(@ Tvj =25, IF=60A)/(@ Tvj =150, IF=60A)=1,35(TYP)V/1.31(TYP)V, V(TO)(@ Tvj =150)=0,85V, rT(@ Tvj =150)=7,8m.

And the thermal characteristics of SKCD24C060IHD are Tvj=-40 to +175=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=1, 21(typ)K/W.

The Mechanical Characteristics of SKCD24C060IHD are raster size(4,9 x 4,9 mm), Area total(24,01 mm2), Chips/wafer(422 pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 pm).

This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.

SKCD24C060IHD Maximum Ratings

SKCD24C060IHD Features

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