SKCD06C120I3

The SKCD11C060I3 (IF =20A, VRRM =600V, Size: 3,3mm X 3,3mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V,optimized for high current density, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, SKCD11C060I3 is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.

The absolute maximum ratings of SKCD11C060I3 are VRRM(@ Tvj =25, IR = 0,1mA)=600V, IF(AV)(@ 80, Tvjmax=150)=18A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=--A/--A, Tvjmax=+150. The electrical characteristics of SKCD11C060I3 are I2t(@ Tvjmax, 10 ms, half sine wave)=--(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1mA(max)/-- mA(max), VF(@ Tvj =25, IF=15A)/(@ Tvj =125, IF=15A)=1,35(TYP)V/1,4(TYP)V and 1,7(max)/--(max)V, V(TO)(@ Tvj =125)=0,8V, rT(@ Tvj =125)=26m. And the thermal characteristics of SKCD11C060I3 are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 24 mm DCB, reference point on copper heatsink close to the chip)=1,93(typ)K/W. The Mechanical Characteristics of SKCD11C060I3 are raster size(3,3*3,3mm), Area total(11,22mm2), Chips/wafer=932(pcs), Anode metallisation(bendable (AI)),  Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).

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