MFG:Semikron Package Cooled:TO-200AB D/C:2009
SKCD14C120IHD, SKCD16C060IHD, SKCD18C060I Datasheet download
MFG: Semikron
Package Cooled: TO-200AB
D/C: 2009
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Datasheet: SKCD14C120IHD
File Size: 247891 KB
Manufacturer: Semikron International
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PDF/DataSheet Download
Datasheet: SKCD16C060IHD
File Size: 235167 KB
Manufacturer: Semikron International
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SKCD18C060I3
File Size: 353058 KB
Manufacturer: Semikron International
Download : Click here to Download
The SKCD14C120IHD (IF =20A, VRRM =1200 V, Size: 3,74mm X3,74 mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V,optimized for high current density, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, which is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.
The absolute maximum ratings of SKCD14C120IHD are VRRM(@ Tvj =25, IR = 0,1mA)=1200V, IF(AV)(@ 80, Tvjmax=150)=17A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=210A/170A, Tvjmax=+150. The electrical characteristics of SKCD14C120IHD are I2t(@ Tvjmax, 10 ms, half sine wave)=145(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1 mA(max)/--, VF(@ Tvj =25, IF=25A)/(@ Tvj =125, IF=25A)=1,5(TYP)V/1,5(TYP)V, V(TO)(@ Tvj =125)=0,92V, rT(@ Tvj =125)=35,2m. And the thermal characteristics of SKCD14C120IHD are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=1,7(typ)K/W. The Mechanical Characteristics of SKCD14C120IHD are raster size(3, 74*3, 74mm), Area total(13,99mm2), Chips/wafer(720pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 pm).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
The SKCD24C060IHD(IF =50A, VRRM = 600 V, Size: 3,97mm X 3,97mm, Package: wafer frame) possesses the features of high current density, easy paralleling due to a small forward voltage spread and a positive temperature coefncient, very soft recovery behavior, small switching losses, high ruggedness compatible to thick wire bonding, compatible to standard solder processes, which is typically applicated as freewheeling diode for 600V IGBT.
The absolute maximum ratings of SKCD16C060IHDS are VRRM(@ Tvj =25, IR = 0,2 mA)=600V, IF(AV)(@ 80, Tvjmax=175)=32A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=345A/320A, Tvjmax=+175. The electrical characteristics of SKCD16C060IHD are I2t(@ Tvj=150, 10 ms, half sine wave)=510 (max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =150, VRRM)=0,2 mA(max)/--, VF(@ Tvj =25, IF=37A)/(@ Tvj =150, IF=37A)=1,35(TYP)V/1.31(TYP)V, V(TO)(@ Tvj =150)=0,85V, rT(@ Tvj =150)=12,6m. And the thermal characteristics of SKCD16C060IHD are Tvj=-40 to +175=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=1,58(typ)K/W. The Mechanical Characteristics of SKCD16C060IHD are raster size(3,97mm X 3,97mm), Area total(15,76 mm2), Chips/wafer(651 pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 pm).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
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