MFG:Semikron Package Cooled:TO-200AB D/C:2009
SKCD04C060IHD, SKCD06C060I3, SKCD06C060IHD Datasheet download
MFG: Semikron
Package Cooled: TO-200AB
D/C: 2009
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Datasheet: SKCD04C060IHD
File Size: 207780 KB
Manufacturer: Semikron International
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Datasheet: SKCD06C060I3
File Size: 294648 KB
Manufacturer: Semikron International
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Datasheet: SKCD06C060IHD
File Size: 219702 KB
Manufacturer: Semikron International
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The SKCD04C060IHD (IF =10A, VRRM = 600 V, Size: 2mm X 2mm, Package: wafer frame) possesses the features of high current density, easy paralleling due to a small forward voltage spread and a positive temperature coefncient, very soft recovery behavior, small switching losses, high ruggedness compatible to thick wire bonding, compatible to standard solder processes, which is typically applicated as freewheeling diode for 600V IGBT.
The absolute maximum ratings of SKCD04C060IHD are VRRM(@ Tvj =25, IR =0,1 mA)=600V, IF(AV)(@ 80, Tvjmax=175)=11A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=75A/65A, Tvjmax=+175. The electrical characteristics of SKCD04C060IHD are I2t(@ Tvj=150, 10 ms, half sine wave)=-- (max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =150, VRRM)=0,1mA(max)/--, VF(@ Tvj =25, IF=7A)/(@ Tvj =150, IF=7A)=1,35(TYP)V/1.31(TYP)V, V(TO)(@ Tvj =150)=0,85V, rT(@ Tvj =150)=66,7m. And the thermal characteristics of SKCD04C060IHD are Tvj=-40 to +175=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=3(typ)K/W. The Mechanical Characteristics of SKCD04C060IHD are raster size(2mm X 2mm), Area total(4mm2), Chips/wafer(2661 pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
The SKCD06C060I3 (IF =15A, VRRM =600V, Size: 2,44mm X2,44 mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V, low forward voltage drop, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, which is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.
The absolute maximum ratings of SKCD06C060I3 are VRRM(@ Tvj =25, IR = 0,1mA)=600V, IF(AV)(@ 80, Tvjmax=150)=10A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=--A/--A, Tvjmax=+150. The electrical characteristics of SKCD06C060I3 are I2t(@ Tvjmax, 10 ms, half sine wave)=--(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1mA(max)/0,5 mA(max), VF(@ Tvj =25, IF=10A)/(@ Tvj =125, IF=10A)=1,35(TYP)V/1,35(TYP)V and 1,6(max)/1,6(max)V, V(TO)(@ Tvj =125)=0,9V, rT(@ Tvj =125)=55m. And the thermal characteristics of SKCD06C060I3 are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=2,46(typ)K/W. The Mechanical Characteristics of SKCD06C060I3 are raster size(2,44*2,44mm), Area total(5,95mm2), Chips/wafer=1720(pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
The SKCD06C060IHD (IF =20A, VRRM = 600 V, Size: 2,44mm X 2,44mm, Package: wafer frame) possesses the features of high current density, easy paralleling due to a small forward voltage spread and a positive temperature coefncient, very soft recovery behavior, small switching losses, high ruggedness compatible to thick wire bonding, compatible to standard solder processes, which is typically applicated as freewheeling diode for 600V IGBT.
The absolute maximum ratings of SKCD06C060IHD are VRRM(@ Tvj =25, IR =0,2 mA)=600V, IF(AV)(@ 80, Tvjmax=175)=16A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=110A/95A, Tvjmax=+175. The electrical characteristics of SKCD06C060IHD are I2t(@ Tvj=150, 10 ms, half sine
wave)=45 (max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =150, VRRM)=0,1mA(max)/--, VF(@ Tvj =25, IF=19A)/(@ Tvj =150, IF=19A)=1,35(TYP)V/1.31(TYP)V, V(TO)(@ Tvj =150)=0,85V, rT(@ Tvj =150)=40m. And the thermal characteristics of SKCD06C060IHD are Tvj=-40 to +175=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=2,46(typ)K/W. The Mechanical Characteristics of SKCD06C060IHD are raster size(2,44mm X 2,44mm), Area total(5,95 mm2), Chips/wafer(1777 pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).
This technical information specifies semiconductor devices. No warranty or guarantee regarding delivery, performance or suitability.
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