SKCD09C060I3

The SKCD09C060I3 (IF =20A, VRRM =600V, Size: 2,95mm X2,95 mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V, low forward voltage drop, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, which is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.

The absolute maximum ratings of SKCD09C060I3 are VRRM(@ Tvj =25, IR = 0,1mA)=600V, IF(AV)(@ 80, Tvjmax=150)=15A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=120A/100A, Tvjmax=+150. The electrical characteristics of SKCD09C060I3 are I2t(@ Tvjmax, 10 ms, half sine wave)=50(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1mA(max)/0,5 mA(max), VF(@ Tvj =25, IF=20A)/(@ Tvj =125, IF=20A)=1,35(TYP)V/1,35(TYP)V and 1,6(max)/1,6(max)V, V(TO)(@ Tvj =125)=0,9V, rT(@ Tvj =125)=33m. And the thermal characteristics of SKCD09C060I3 are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=2,11(typ)K/W. The Mechanical Characteristics of SKCD09C060I3 are raster size(2,95*2,95mm), Area total(8,70mm2), Chips/wafer=1171(pcs), Anode metallisation(bendable (AI)),  Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500 m).

This technical information specifies semiconductor devices about SKCD09C060I3. No warranty or guarantee regarding delivery, performance or suitability.