SKCD06C120IHD

The SKCD06C120IHD (IF =6A, VRRM =1200 V, Size: 2,44mm X2,44 mm, Package: wafer frame) possesses the features of using in 600V, 1200V and 1700V,optimized for high current density, easy paralleling due to a small forward voltage spread, low temperature dependence, very soft recovery behavior small switching losses, high ruggedness, compatible to thick wire bonding compatible to all standard solder processes, SKCD06C120IHD is typically applicated as freewheeling diode for IGBT and optimal at frequencies > 8kHz.

The absolute maximum ratings of SKCD06C120IHD are VRRM(@ Tvj =25, IR = 0,1mA)=1200V, IF(AV)(@ 80, Tvjmax=150)=8A, IFSM(@ Tvj = 25, 10 ms, half sine wave)/(@Tvj = 150, 10 ms, half sine wave )=60A/55A, Tvjmax=+150. The electrical characteristics of SKCD06C120IHD are I2t(@ Tvjmax, 10 ms, half sine wave)=15(max)A2s, IR(@ Tvj =25, VRRM)/(@ Tvj =125, VRRM)=0,1 mA(max)/--, VF(@ Tvj =25, IF=25A)/(@ Tvj =125, IF=25A)=1,5(TYP)V/1,5(TYP)V, V(TO)(@ Tvj =125)=0,92V, rT(@ Tvj =125)=119,8m. And the thermal characteristics of SKCD06C120IHD are Tvj=-40 to +150=Tstg, Tsolder(@ 10 min)/(@ 5 min)=+250/+320, Rth(j-h)(@ soldered on 0, 38 mm DCB, reference point on copper heatsink close to the chip)=2,46(typ)K/W. The Mechanical Characteristics of SKCD06C120IHD are raster size(2,44*2,44mm), Area total(5,95mm2), Chips/wafer(1720pcs), Anode metallisation(bendable (AI)), Cathode metallisation(solderable (Ag/Ni)), wire bond(AI, diameter500m).

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