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The RMPA2456 power amplifier is designed for high performance WLAN applications in the 2.42.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA's industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.
RMPA2456 Maximum Ratings
Symbol
Parameter
Ratings
Units
VC1, VC2, VC3
Positive Supply Voltage
5
V
IC1, IC2, IC3
Supply Current IC1 IC2 IC3
50 150 700
mA mA mA
VM123
Positive Bias Voltage
4.0
V
PIN
RF Input Power
+5
dBm
TCASE
Case Operating Temperature
-40 to +85
TSTG
Storage Temperature
-55 to +150
Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
RMPA2456 Features
·31.5dB small signal gain ·27dBm output power @ 1dB compression ·100mA total current at 19dBm modulated power out ·2.8% EVM at 19 dBm modulated power out ·3.3V supply operation ·Power saving shutdown options (bias control) ·Integrated power detector with 20dB dynamic range ·Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package ·Internally matched to 50 Ohms and DC blocked RF input/ output ·Optimized for use in 802.11b/g applications
The RMPA2458 power amplifier is designed for high performance WLAN applications in the 2.42.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA's industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.
RMPA2458 Maximum Ratings
Symbol
Parameter
Ratings
Units
VC1, VC2, VC3
Positive Supply Voltage
5
V
IC1, IC2, IC3
Supply Current IC1 IC2 IC3
50 150 700
mA mA mA
VM123
Positive Bias Voltage
3.6
V
PIN
RF Input Power
+5
dBm
TCASE
Case Operating Temperature
-40 to +85
TSTG
Storage Temperature
-55 to +150
Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
RMPA2458 Features
·31.5dB small signal gain ·27dBm output power @ 1dB compression ·103mA total current at 19dBm modulated power out ·2.5% EVM at 19 dBm modulated power out ·3.3V collector supply operation ·2.9V mirror supply operation ·Power saving shutdown options (bias control) ·Integrated power detector with 20dB dynamic range ·Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package ·Internally matched to 50 Ohms and DC blocked RF input/ output ·Optimized for use in 802.11b/g applications