PMV437-1AF5, PMV45EN, PMV60EN Selling Leads, Datasheet
MFG:NQRTEL Package Cooled:QFP2727-208 D/C:02+
PMV437-1AF5, PMV45EN, PMV60EN Datasheet download
Part Number: PMV437-1AF5
MFG: NQRTEL
Package Cooled: QFP2727-208
D/C: 02+
PMV437-1AF5, PMV45EN, PMV60EN
- Table of contents:
Info of PMV437-1AF5
Info of PMV45EN
Info of PMV60EN
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About PMV117EN
PDF/DataSheet Download
Datasheet: PMV117EN
File Size: 83833 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PMV45EN
PDF/DataSheet Download
Datasheet: PMV45EN
File Size: 244427 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PMV60EN
PDF/DataSheet Download
Datasheet: PMV60EN
File Size: 244207 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PMV45EN General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMV45EN in SOT23.
Product availability:PMV45EN in SOT23.
PMV45EN Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | 30 | V |
| VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C;RGS =20k |
- | 30 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 | - | 5.4 | A |
| Tsp = 100 °C; VGS = 10 V; Figure 2 | - | 3.4 | A | ||
| IDM | peak drain current | Tsp = 25 °C; pulsed; tp 10s; Figure 3 |
- | 21.6 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 2 | W |
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | junction temperature | -55 | +150 | °C | |
|
Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 °C | - | 1.7 | A |
| ISM | peak source (diode forward) current | Tsp = 25 °C; pulsed; tp 10s | - | 6.9 | A |
PMV45EN Features
Surface mount package
Fast switching
Fast switching
PMV45EN Typical Application
Battery management
High speed switch.
High speed switch.
PMV45EN Connection Diagram
PMV60EN General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMV60EN in SOT23.
Product availability:PMV60EN in SOT23.
PMV60EN Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | 30 | V |
| VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; |
- | 30 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 |
- | 4.7 | A |
| Tsp = 100 °C; VGS = 10 V; Figure 2 |
- | 2.9 | A | ||
| IDM | peak drain current | Tsp = 25 °C;pulsed; tp 10s; Figure 3 |
- | 18.8 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 2 | W |
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | junction temperature | -55 | +150 | °C | |
|
Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 °C | - | 1.7 | A |
| ISM | peak source (diode forward) current | Tsp = 25 °C;pulsed; tp 10s | - | 6.9 | A |
PMV60EN Features
Surface mount package
Fast switching
Fast switching
PMV60EN Typical Application
Battery management
High speed switch.
High speed switch.
PMV60EN Connection Diagram
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