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PMV213SN

Features: Low on-state resistance in a small surface mount package.ApplicationDC-to-DC primary side switching.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 °C - 100 V VDGR drain-gate voltage (DC) ...

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SeekIC No. : 004464246 Detail

PMV213SN: Features: Low on-state resistance in a small surface mount package.ApplicationDC-to-DC primary side switching.PinoutSpecifications Symbol Parameter Conditions Min Max Unit ...

PMV213SN Data Sheet

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Part Number:
PMV213SN
Supply Ability:
5000

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  • Processing time
  • 15 Days
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Product Details

Description



Features:

Low on-state resistance in a small surface mount package.


Application

DC-to-DC primary side switching.


Pinout

Connection Diagram




Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 100 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 100 V
VGS gate-source voltage (DC)   - ±30 V
ID drain current (DC) Tsp = 25 °C; VGS = 10 V;
Figure 2 and 3		 - 1.9 A
Tsp = 100 °C; VGS = 10 V;

Figure 2		 - 1.2 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 7.6 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 2 W
Tstg storage temperature   -55 +150 °C
Tj junction temperature   -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 1.7 A
ISM peak source (diode forward) current Tsp = 25 °C;pulsed; tp 10s - 6.9 A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMV213SN in SOT23.


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