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PMV30UN

Features: Surface mount package Fast switching.ApplicationBattery management High-speed switches.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 °C - 20 V VDGR drain-gate voltage (DC) 25 °C Tj 150 °C...

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SeekIC No. : 004464247 Detail

PMV30UN: Features: Surface mount package Fast switching.ApplicationBattery management High-speed switches.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-s...

PMV30UN Data Sheet

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Part Number:
PMV30UN
Supply Ability:
5000

Price Break

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Surface mount package
Fast switching.


Application

Battery management
High-speed switches.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 20 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 20 V
VGS gate-source voltage (DC)   - ±8 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3		 - 5.7 A
Tsp = 100 °C; VGS = 4.5 V;
Figure 2		 - 3.65 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 23.1 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 1.9 W
Tstg storage temperature   -55 +150 °C
Tj junction temperature   -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 1.6 A
ISM peak source (diode forward) current Tsp = 25 °C;pulsed; tp 10s - 6.4 A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMV30UN in SOT23.


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