Position: Home  > All Categories> Integrated Circuits (ICs) > PMV30UN

PMV30UN

Features: Surface mount package Fast switching.ApplicationBattery management High-speed switches.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 °C - 20 V VDGR drain-gate voltage (DC) 25 °C Tj 150 °C...

product image

PMV30UN Picture
See larger image
SeekIC No. : 004464247 Detail

PMV30UN: Features: Surface mount package Fast switching.ApplicationBattery management High-speed switches.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-s...

PMV30UN Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PMV30UN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Surface mount package
Fast switching.


Application

Battery management
High-speed switches.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 20 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 20 V
VGS gate-source voltage (DC)   - ±8 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3		 - 5.7 A
Tsp = 100 °C; VGS = 4.5 V;
Figure 2		 - 3.65 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 23.1 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 1.9 W
Tstg storage temperature   -55 +150 °C
Tj junction temperature   -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 1.6 A
ISM peak source (diode forward) current Tsp = 25 °C;pulsed; tp 10s - 6.4 A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMV30UN in SOT23.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Undefined Category
VI-B63-IU
X27 589
RF and RFID
X3C26P1-30S
1P620S
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more