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PMV31XN

Features: TrenchMOS™ technologyVery fast switchingLow threshold voltageSurface mount package.ApplicationBattery powered motor controlHigh-speed switch in set top box power supplies.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source volt...

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PMV31XN: Features: TrenchMOS™ technologyVery fast switchingLow threshold voltageSurface mount package.ApplicationBattery powered motor controlHigh-speed switch in set top box power supplies.PinoutSpeci...

PMV31XN Data Sheet

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Part Number:
PMV31XN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TrenchMOS™ technology
Very fast switching
Low threshold voltage
Surface mount package.


Application

Battery powered motor control
High-speed switch in set top box power supplies.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 20 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 20 V
VGS gate-source voltage (DC) - ±12 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3		 - 5.9 A
Tsp = 100 °C; VGS = 4.5 V;

Figure 2		 - 3.75 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 23.7 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 2 W
Tstg storage temperature -55 +150 °C
Tj junction temperature -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 1.7 A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMV31XN in SOT23.


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