PMV213SN T/R, PMV31XN, PMV40UN Selling Leads, Datasheet
MFG:NXP Package Cooled:SOT-23 D/C:08+
PMV213SN T/R, PMV31XN, PMV40UN Datasheet download
Part Number: PMV213SN T/R
MFG: NXP
Package Cooled: SOT-23
D/C: 08+
PMV213SN T/R, PMV31XN, PMV40UN
- Table of contents:
Info of PMV213SN T/R
Info of PMV31XN
Info of PMV40UN
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About PMV117EN
PDF/DataSheet Download
Datasheet: PMV117EN
File Size: 83833 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PMV31XN
PDF/DataSheet Download
Datasheet: PMV31XN
File Size: 246922 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PMV40UN
PDF/DataSheet Download
Datasheet: PMV40UN
File Size: 247533 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PMV31XN General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMV31XN in SOT23.
Product availability:PMV31XN in SOT23.
PMV31XN Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | 20 | V |
| VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; |
- | 20 | V |
| VGS | gate-source voltage (DC) | - | ±12 | V | |
| ID | drain current (DC) | Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 |
- | 5.9 | A |
| Tsp = 100 °C; VGS = 4.5 V; Figure 2 |
- | 3.75 | A | ||
| IDM | peak drain current | Tsp = 25 °C;pulsed; tp 10s; Figure 3 |
- | 23.7 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 2 | W |
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | junction temperature | -55 | +150 | °C | |
|
Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 °C | - | 1.7 | A |
PMV31XN Features
TrenchMOS™ technology
Very fast switching
Low threshold voltage
Surface mount package.
Very fast switching
Low threshold voltage
Surface mount package.
PMV31XN Typical Application
Battery powered motor control
High-speed switch in set top box power supplies.
High-speed switch in set top box power supplies.
PMV31XN Connection Diagram
PMV40UN General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMV40UN in SOT23.
Product availability:PMV40UN in SOT23.
PMV40UN Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | 30 | V |
| VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; |
- | 30 | V |
| VGS | gate-source voltage (DC) | - | ±8 | V | |
| ID | drain current (DC) | Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 |
- | 4.9 | A |
| Tsp = 100 °C; VGS = 4.5 V; Figure 2 |
- | 3.1 | A | ||
| IDM | peak drain current | Tsp = 25 °C;pulsed; tp 10s; Figure 3 |
- | 19.6 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 1.9 | W |
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | junction temperature | -55 | +150 | °C | |
|
Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 °C | - | 1.6 | A |
| ISM | peak source (diode forward) current | Tsp = 25 °C; pulsed; tp 10s | - | 6.4 | A |
PMV40UN Features
Ultra low level threshold
Surface mount package.
Surface mount package.
PMV40UN Typical Application
Battery management
High-speed switch
High-speed switch
PMV40UN Connection Diagram
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