PMV117EN, PMV117EN.215, PMV213SN Selling Leads, Datasheet
MFG:NXP Package Cooled:SOT-23 D/C:07+(ROHS)
PMV117EN, PMV117EN.215, PMV213SN Datasheet download
Part Number: PMV117EN
MFG: NXP
Package Cooled: SOT-23
D/C: 07+(ROHS)
PMV117EN, PMV117EN.215, PMV213SN
- Table of contents:
Info of PMV117EN
Info of PMV117EN.215
Info of PMV213SN
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About PMV117EN
PDF/DataSheet Download
Datasheet: PMV117EN
File Size: 83833 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PMV117EN
PDF/DataSheet Download
Datasheet: PMV117EN
File Size: 83833 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PMV213SN
PDF/DataSheet Download
Datasheet: PMV213SN
File Size: 99881 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PMV117EN General Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
PMV117EN Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | 30 | V |
| VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; |
- | 30 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 |
- | 2.5 | A |
| Tsp = 100 °C; VGS = 10 V; Figure 2 |
- | 1.6 | A | ||
| IDM | peak drain current | Tsp = 25 °C;pulsed; tp 10s; Figure 3 |
- | 10 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 0.83 | W |
| Tstg | storage temperature | -65 | +150 | °C | |
| Tj | junction temperature | -65 | +150 | °C | |
|
Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 °C | - | 0.8 | A |
| ISM | peak source (diode forward) current | Tsp = 25 °C; pulsed; tp 10s | - | 3.3 | A |
PMV117EN Features
Logic level threshold
Very fast switching
Subminiature surface-mounted package
Very fast switching
Subminiature surface-mounted package
PMV117EN Typical Application
Battery management
Low power DC-to-DC converter
High-speed switch
Low power DC-to-DC converter
High-speed switch
PMV117EN Connection Diagram
PMV213SN General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMV213SN in SOT23.
Product availability:PMV213SN in SOT23.
PMV213SN Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | 100 | V |
| VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; |
- | 100 | V |
| VGS | gate-source voltage (DC) | - | ±30 | V | |
| ID | drain current (DC) | Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 |
- | 1.9 | A |
| Tsp = 100 °C; VGS = 10 V; Figure 2 |
- | 1.2 | A | ||
| IDM | peak drain current | Tsp = 25 °C;pulsed; tp 10s; Figure 3 |
- | 7.6 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 2 | W |
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | junction temperature | -55 | +150 | °C | |
|
Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 °C | - | 1.7 | A |
| ISM | peak source (diode forward) current | Tsp = 25 °C;pulsed; tp 10s | - | 6.9 | A |
PMV213SN Features
Low on-state resistance in a small surface mount package.
PMV213SN Typical Application
DC-to-DC primary side switching.
PMV213SN Connection Diagram
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