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PMV117EN

Features: Logic level threshold Very fast switchingSubminiature surface-mounted packageApplicationBattery managementLow power DC-to-DC converterHigh-speed switchPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 °C ...

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PMV117EN: Features: Logic level threshold Very fast switchingSubminiature surface-mounted packageApplicationBattery managementLow power DC-to-DC converterHigh-speed switchPinoutSpecifications Symbol ...

PMV117EN Data Sheet

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Part Number:
PMV117EN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

Logic level threshold
Very fast switching
Subminiature surface-mounted package


Application

Battery management 
Low power DC-to-DC converter
High-speed switch


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 30 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 30 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tsp = 25 °C; VGS = 10 V;
Figure 2 and 3		 - 2.5 A
Tsp = 100 °C; VGS = 10 V;

Figure 2		 - 1.6 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 10 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 0.83 W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   -65 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 0.8 A
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10s - 3.3 A



Description

PMV117EN Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.


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