MOSFET TAPE13 PWR-MOS
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.5 A | ||
Resistance Drain-Source RDS (on) : | 117 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Technical/Catalog Information | PMV117EN,215 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2.5A |
Rds On (Max) @ Id, Vgs | 117 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 147pF @ 10V |
Power - Max | 830mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 4.6nC @ 10V |
Package / Case | SST3 (SOT-23-3) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT23; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PMV117EN,215 PMV117EN,215 |