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PMV40UN

Features: Ultra low level threshold Surface mount package.ApplicationBattery managementHigh-speed switchPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 °C - 30 V VDGR drain-gate voltage (DC) 25 °C Tj...

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SeekIC No. : 004464249 Detail

PMV40UN: Features: Ultra low level threshold Surface mount package.ApplicationBattery managementHigh-speed switchPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS ...

PMV40UN Data Sheet

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Part Number:
PMV40UN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Ultra low level threshold
Surface mount package.


Application

Battery management 
High-speed switch


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 30 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 30 V
VGS gate-source voltage (DC)   - ±8 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3		 - 4.9 A
Tsp = 100 °C; VGS = 4.5 V;

Figure 2		 - 3.1 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 19.6 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 1.9 W
Tstg storage temperature   -55 +150 °C
Tj junction temperature   -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 1.6 A
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10s - 6.4 A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMV40UN in SOT23.


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