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PBSS2515VS, PBSS2515VS 115, PBSS2515YPN /NBT

Table of contents:
Info of PBSS2515VS
Info of PBSS2515VS 115
Info of PBSS2515YPN /NBT

PBSS2515VS, PBSS2515VS 115, PBSS2515YPN /NBT Selling Leads, Datasheet

MFG:philips Package Cooled:sot-563 D/C:05+4RN

PBSS2515VS, PBSS2515VS 115, PBSS2515YPN /NBT Picture

PBSS2515VS, PBSS2515VS 115, PBSS2515YPN /NBT Datasheet download

Five Points

Part Number: PBSS2515VS

MFG: philips

Package Cooled: sot-563

D/C: 05+4RN

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PBSS2515VS General Description

NPN low V_CEsatdouble transistor in a SOT666 plastic package.
PNP complement: PBSS3515VS.

PBSS2515VS Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per transistor unless otherwise specified
V_CBO	collector-base voltage	open emitter	-	-15	V
V_CEO	collector-emitter voltage	open base	-	-15	V
V_EBO	emitter-base voltage	open collector	-	-6	V
I_C	collector current (DC)		-	-500	A
I_CM	peak collector current	limited by Tj max	-	-1	A
I_B	base current (DC)		-	-100	mA
P_tot	total power dissipation	T_amb 25 °C; note 1	-	200	mW
T_stg	storage temperature		-65	+150	mW
T_j	junction temperature		-	150	°C
T_amb	operating ambient temperature		-65	+150	°C
Per device
P_tot	total power dissipation	T_amb 25 °C; note 2	-	300	°C

Note
1. Transistor mounted on an FR4 printed-circuit board.

PBSS2515VS Features

· 300 mW total power dissipation
· Very small 1.6 x 1.2 mm ultra thin package
· Excellent coplanarity due to straight leads
· Low collector-emitter saturation voltage
· High current capability
· Improved thermal behaviour due to flat lead
· Replaces two SC-75/SC-89 packaged low V_CEsat transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs.

PBSS2515VS Typical Application

· General purpose switching and muting
· Low frequency driver circuits
· LCD backlighting
· Audio frequency general purpose amplifier applications
· Battery driven equipment (mobile phones, video cameras and hand-held devices).

PBSS2515VS Connection Diagram

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