PBSS2515VPN, PBSS2515YPN, PBSS2540F Selling Leads, Datasheet
MFG:PHIL Package Cooled:ph D/C:08+09+
PBSS2515VPN, PBSS2515YPN, PBSS2540F Datasheet download
Part Number: PBSS2515VPN
MFG: PHIL
Package Cooled: ph
D/C: 08+09+
MFG:PHIL Package Cooled:ph D/C:08+09+
PBSS2515VPN, PBSS2515YPN, PBSS2540F Datasheet download
MFG: PHIL
Package Cooled: ph
D/C: 08+09+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: PBSS2515VPN
File Size: 91269 KB
Manufacturer: Philips
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PBSS2515YPN
File Size: 93730 KB
Manufacturer: Philips
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PBSS2540F
File Size: 65162 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO |
collector-base voltage |
open emitter |
- |
15 |
V |
VCEO |
collector-emitter voltage |
open base |
- |
15 |
V |
VEBO |
emitter-base voltage |
open collector |
- |
6 |
V |
IC |
collector current (DC) |
- |
500 |
mA | |
ICM |
peak collector current |
- |
1 |
A | |
IBM |
peak base current |
- |
-100 |
mA | |
Ptot |
total power dissipation |
Tamb 25 °C1 |
- |
200 |
mW |
Tstg |
storage temperature |
-65 |
+150 |
°C | |
Tj |
junction temperature |
- |
150 |
°C | |
Tamb |
operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot |
total power dissipation | Tamb 25 °C1 |
- |
300 |
mW |
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO |
collector-base voltage |
open emitter |
- |
15 |
V |
VCEO |
collector-emitter voltage |
open base |
- |
15 |
V |
VEBO |
emitter-base voltage |
open collector |
- |
6 |
V |
IC |
collector current (DC) |
- |
500 |
mA | |
ICM |
peak collector current |
- |
1 |
A | |
IBM |
peak base current |
- |
-100 |
mA | |
Ptot |
total power dissipation |
Tamb 25 °C |
- |
250 |
mW |
Tstg |
storage temperature |
-65 |
+150 |
°C | |
Tj |
junction temperature |
- |
150 |
°C | |
Tamb |
operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot |
total power dissipation | Tamb 25 °C1 |
- |
300 |
mW |
NPN low VCEsat transistor in a SC-89 (SOT490) plastic package.
PNP complement: PBSS3540F.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 40 | V |
VCEO | collector-emitter voltage | open base | - |
40 |
V |
VEBO | emitter-base voltage | open collector | - | 6 | V |
IC | collector current (DC) | - | 500 | mA | |
ICM | average collector current | - | 1 | A | |
IBM | peak base current | - | 100 | mA | |
Ptot | total power dissipation | Tamb 25 °C |
250 | mW | |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | - | 150 | °C | |
Tamb | ambient temperature | -65 | +150 | °C |