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PBSS2515YPN

Features: · Low collector-emitter saturation voltage· High current capability· Replaces two SC-70 packaged low VCEsat transistors on same PCB area· Reduces required PCB area· Reduced pick and place costsApplication· General purpose switching and muting· Low frequency driver circuits· LCD backlight...

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SeekIC No. : 004455622 Detail

PBSS2515YPN: Features: · Low collector-emitter saturation voltage· High current capability· Replaces two SC-70 packaged low VCEsat transistors on same PCB area· Reduces required PCB area· Reduced pick and place ...

PBSS2515YPN Data Sheet

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Part Number:
PBSS2515YPN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Low collector-emitter saturation voltage
· High current capability
· Replaces two SC-70 packaged low VCEsat transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs


Application

· General purpose switching and muting
· Low frequency driver circuits
· LCD backlighting
· Supply line switching circuits
· Battery driven equipment (mobile phones, video cameras and hand-held devices).


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
 collector-base voltage
open emitter
-
15
V
VCEO
 collector-emitter voltage
open base
-
15
V
VEBO
 emitter-base voltage
open collector
-
6
V
IC
 collector current (DC)
-
500
mA
ICM
 peak collector current
-
1
A
IBM
 peak base current
-
-100
mA
Ptot
 total power dissipation
Tamb 25 °C
-
250
mW
Tstg
 storage temperature
-65
+150
°C
Tj
 junction temperature
-
150
°C
Tamb
 operating ambient temperature
-65
+150
°C
Per device
Ptot
 total power dissipation Tamb 25 °C1
-
300
mW
1. Transistor mounted on an FR4 printed-circuit board.


Description

NPN/PNP low VCEsat transistor PBSS2515YPN pair in a SC-88 plastic package.


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