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PBSS2515F

Features: · Low collector-emitter saturation voltage· High current capabilities· Improved thermal behaviour due to flat leads.Application· General purpose switching and muting· Low frequency driver circuits· LCD backlighting· Audio frequency general purpose amplifier applications· Battery driven e...

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SeekIC No. : 004455618 Detail

PBSS2515F: Features: · Low collector-emitter saturation voltage· High current capabilities· Improved thermal behaviour due to flat leads.Application· General purpose switching and muting· Low frequency driver ...

PBSS2515F Data Sheet

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Part Number:
PBSS2515F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Low collector-emitter saturation voltage
· High current capabilities
· Improved thermal behaviour due to flat leads.


Application

· General purpose switching and muting
· Low frequency driver circuits
· LCD backlighting
· Audio frequency general purpose amplifier applications
· Battery driven equipment (mobile phones, video cameras and hand-held devices).


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
 collector-base voltage
open emitter
-
15
V
VCEO
 collector-emitter voltage
open base
-
15
V
VEBO
 emitter-base voltage
open collector
-
6
V
IC
 collector current (DC)
-
500
mA
ICM
 peak collector current
-
1
A
IBM
 peak base current
-
-100
mA
Ptot
 total power dissipation
Tamb 25 °C
-
250
mW
Tstg
 storage temperature
-65
+150
°C
Tj
 junction temperature
-
150
°C
Tamb
 operating ambient temperature
-65
+150
°C



Description

NPN low VCEsat transistor PBSS2515F in a SC-89 (SOT490) plastic package.
PNP complement: PBSS3515F.


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