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PBSS2515M

Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High efficiency leading to reduced heat generation· Reduced printed-circuit board requirements.Application` Power management: DC-DC converter Supply line switching Battery charger LCD bac...

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SeekIC No. : 004455619 Detail

PBSS2515M: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High efficiency leading to reduced heat generation· Reduced printed-circuit board requireme...

PBSS2515M Data Sheet

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Part Number:
PBSS2515M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/31

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Product Details

Description



Features:

· Low collector-emitter saturation voltage VCEsat
· High collector current capability IC and ICM
· High efficiency leading to reduced heat generation
· Reduced printed-circuit board requirements.


Application

` Power management:
   DC-DC converter
   Supply line switching
   Battery charger
   LCD backlighting.
` Peripheral driver:
   Driver in low supply voltage applications (e.g. lamps and LEDs)
   Inductive load drivers (e.g. relays, buzzers and motors).


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 15 V
VCEO collector-emitter voltage open base - 15 V
VEBO emitter-base voltage open collector - 6 V
IC
 collector current (DC) notes 1 and 2 - 500 mA
ICM peak collector current - 1 A
IBM peak base current - 100 mA
Ptot total power dissipation Tamb 25 °C; note 1 and 2 - 250 mW
Tamb 25 °C; note 1 and 3 - 430 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C



Description

Low VCEsat NPN transistor PBSS2515M in a SOT883 leadless ultra small plastic package.

PNP complement: PBSS3515M.


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