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PBSS2515VPN

Features: · 300 mW total power dissipation· Very small 1.6 x 1.2 mm ultra thin package· Excellent coplanarity due to straight leads· Low collector-emitter saturation voltage· High current capability· Improved thermal behaviour due to flat lead· Replaces two SC75/SC89 packaged low VCEsat transistor...

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SeekIC No. : 004455620 Detail

PBSS2515VPN: Features: · 300 mW total power dissipation· Very small 1.6 x 1.2 mm ultra thin package· Excellent coplanarity due to straight leads· Low collector-emitter saturation voltage· High current capability...

PBSS2515VPN Data Sheet

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Part Number:
PBSS2515VPN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· 300 mW total power dissipation
· Very small 1.6 x 1.2 mm ultra thin package
· Excellent coplanarity due to straight leads
· Low collector-emitter saturation voltage
· High current capability
· Improved thermal behaviour due to flat lead
· Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs


Application

· General purpose switching and muting
· Low frequency driver circuits
· LCD backlighting
· Audio frequency general purpose amplifier applications
· Battery driven equipment (mobile phones, video cameras and hand-held devices).


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
 collector-base voltage
open emitter
-
15
V
VCEO
 collector-emitter voltage
open base
-
15
V
VEBO
 emitter-base voltage
open collector
-
6
V
IC
 collector current (DC)
-
500
mA
ICM
 peak collector current
-
1
A
IBM
 peak base current
-
-100
mA
Ptot
 total power dissipation
Tamb 25 °C1
-
200
mW
Tstg
 storage temperature
-65
+150
°C
Tj
 junction temperature
-
150
°C
Tamb
 operating ambient temperature
-65
+150
°C
Per device
Ptot
 total power dissipation Tamb 25 °C1
-
300
mW
1. Transistor mounted on an FR4 printed-circuit board.


Description

NPN/PNP low VCEsat transistor  PBSS2515VPN pair in a SOT666 plastic package.


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