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PBSS2540F

Features: · Low collector-emitter saturation voltage· High current capability· Improved thermal behaviour due to flat leads· Enhanced performance over SOT23 general purpose transistors.Application· General purpose switching and muting· Low frequency driver circuits· Audio frequency general purpose...

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SeekIC No. : 004455623 Detail

PBSS2540F: Features: · Low collector-emitter saturation voltage· High current capability· Improved thermal behaviour due to flat leads· Enhanced performance over SOT23 general purpose transistors.Application· ...

PBSS2540F Data Sheet

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Part Number:
PBSS2540F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Low collector-emitter saturation voltage
· High current capability
· Improved thermal behaviour due to flat leads
· Enhanced performance over SOT23 general purpose transistors.


Application

· General purpose switching and muting
· Low frequency driver circuits
· Audio frequency general purpose amplifier applications
· Battery driven equipment (mobile phones, video cameras, hand-held devices).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base -

40

 V
VEBO emitter-base voltage open collector - 6 V
IC collector current (DC)   - 500 mA
ICM average collector current   - 1 A
IBM peak base current   - 100 mA
Ptot total power dissipation Tamb 25 °C
   250 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C



Description

NPN low VCEsat transistor PBSS2540F in a SC-89 (SOT490) plastic package.

PNP complement: PBSS3540F.




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