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Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package.
PNP complement: PBSS3515M.
PBSS2515M Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
-
15
V
VCEO
collector-emitter voltage
open base
-
15
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current (DC)
notes 1 and 2
-
500
mA
ICM
peak collector current
-
1
A
IBM
peak base current
-
100
mA
Ptot
total power dissipation
Tamb 25 °C; note 1 and 2
-
250
mW
Tamb 25 °C; note 1 and 3
-
430
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
operating ambient temperature
-65
+150
°C
PBSS2515M Features
· Low collector-emitter saturation voltage VCEsat · High collector current capability IC and ICM · High efficiency leading to reduced heat generation · Reduced printed-circuit board requirements.
PBSS2515M Typical Application
` Power management: DC-DC converter Supply line switching Battery charger LCD backlighting. ` Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load drivers (e.g. relays, buzzers and motors).