MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:2008 D/C:WDFN-6
NTLJD4116NT1G, NTLJF3117PTAG, NTLJF4156N Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: 2008
D/C: WDFN-6
Description: MOSFET P-CH 20V 2.3A 6-WDFN
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PDF/DataSheet Download
Datasheet: NTL4502N
File Size: 86016 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTL4502N
File Size: 86016 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTLJF4156N
File Size: 102934 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
| Technical/Catalog Information | NTLJF3117PTAG |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.3A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 531pF @ 10V |
| Power - Max | 710mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 6.2nC @ 4.5V |
| Package / Case | 6-WDFN |
| FET Feature | Diode (Isolated) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTLJF3117PTAG NTLJF3117PTAG |
|
Parameter |
Symbol |
Value |
Unit | ||
|
Drain−to−Source Voltage |
VDSS |
30 |
V | ||
|
Gate−to−Source Voltage |
VGS |
±8.0 |
V | ||
|
Continuous Drain Current (Note 1) |
Steady State |
TJ = 25°C |
ID |
3.0 |
A |
|
TJ = 85°C |
2.4 | ||||
|
t 5 s |
TJ = 25°C |
4.0 | |||
|
Power Dissipation (Note 1) |
Steady State |
PD |
1.21 |
W | |
|
t 5 s |
2.08 | ||||
|
Continuous Drain Current (Note 2) |
Steady State |
TJ = 25°C |
ID |
2.0 |
A |
|
TJ = 85°C |
1.4 | ||||
|
Power Dissipation (Note 2) |
TJ = 25°C |
PD |
0.44 |
A | |
|
Pulsed Drain Current |
tp = 10 s |
IDM |
17 |
A | |
|
Operating Junction and Storage Temperature |
TJ , TSTG |
−55 to 150 |
°C | ||
|
Source Current (Body Diode) (Note 2) |
IS |
2.4 |
A | ||
|
Lead Temperature for Soldering Purposes (1/8 from case for 10 s) |
TL |
260 |
°C | ||
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
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