Features: • Leadless SMD Package Featuring a MOSFET and Schottky Diode• Better Thermal Resistance than TSOP−6 Package• R DS(on) Rated at Low V GS(on) Levels, VGS = 1.5 V• Low VF Schottky• This is a Pb−Free DeviceApplication• DC−DC Converters...
NTLJF4156N: Features: • Leadless SMD Package Featuring a MOSFET and Schottky Diode• Better Thermal Resistance than TSOP−6 Package• R DS(on) Rated at Low V GS(on) Levels, VGS = 1.5 V̶...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Value |
Unit | ||
Drain−to−Source Voltage |
VDSS |
30 |
V | ||
Gate−to−Source Voltage |
VGS |
±8.0 |
V | ||
Continuous Drain Current (Note 1) |
Steady State |
TJ = 25°C |
ID |
3.0 |
A |
TJ = 85°C |
2.4 | ||||
t 5 s |
TJ = 25°C |
4.0 | |||
Power Dissipation (Note 1) |
Steady State |
PD |
1.21 |
W | |
t 5 s |
2.08 | ||||
Continuous Drain Current (Note 2) |
Steady State |
TJ = 25°C |
ID |
2.0 |
A |
TJ = 85°C |
1.4 | ||||
Power Dissipation (Note 2) |
TJ = 25°C |
PD |
0.44 |
A | |
Pulsed Drain Current |
tp = 10 s |
IDM |
17 |
A | |
Operating Junction and Storage Temperature |
TJ , TSTG |
−55 to 150 |
°C | ||
Source Current (Body Diode) (Note 2) |
IS |
2.4 |
A | ||
Lead Temperature for Soldering Purposes (1/8 from case for 10 s) |
TL |
260 |
°C |
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.