NTLTD7900ZR2

MOSFET 20V 9A N-Channel

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NTLTD7900ZR2 Picture
SeekIC No. : 00165975 Detail

NTLTD7900ZR2: MOSFET 20V 9A N-Channel

floor Price/Ceiling Price

Part Number:
NTLTD7900ZR2
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.031 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Micro-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 6 A
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : Micro-8
Resistance Drain-Source RDS (on) : 0.031 Ohms


Features:

Pb−Free Package is Available


Application

• Zener Protected Gates Provide Electrostatic Discharge Protection
• Designed to Withstand 4000 V Human Body Model
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can be Driven by Logic ICs
• Micro8 Leadless Surface Mount Package − Saves Board Space
• IDSS Specified at Elevated Temperature



Pinout

  Connection Diagram


Specifications

Rating Symbol 10 Sec Steady
State
Unit
Drain−to−Source Voltage VDSS 20 V
Gate−to−Source Voltage VGS ±12 V
Continuous Drain Current (Note 1)
TA = 25°C
TA = 85°C
ID 9.0
6.4
6.0
4.3
A
Pulsed Drain Current
(tp 10 s)
IDM 30 A
Continuous Source−Diode
Conduction (Note 1)
Is 2.9 1.4 A
Total Power Dissipation (Note 1)
TA = 25°C
TA = 85°C
PD 3.2
1.7
1.5
0.79
W
Operating Junction and Storage
Temperature Range
TJ, Tstg −55 to 150 °C
Thermal Resistance (Note 1)
Junction−to−Ambient
RJA 38 82 °C/W


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. When surface mounted to 1 x 1 FR−4 board.




Description

NTLTD7900ZR2 are an advanced series of Power MOSFETs which contain monolithic back−to−back Zener diodes. These Zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs NTLTD7900ZR2 feature ultra low RDS(on) and true logic level performance. EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications of NTLTD7900ZR2 are DC−DC converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.




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