MOSFET 20V 9A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 6 A | ||
Resistance Drain-Source RDS (on) : | 0.031 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Micro-8 | Packaging : | Reel |
Rating | Symbol | 10 Sec | Steady State |
Unit |
Drain−to−Source Voltage | VDSS | 20 | V | |
Gate−to−Source Voltage | VGS | ±12 | V | |
Continuous Drain Current (Note 1) TA = 25°C TA = 85°C |
ID | 9.0 6.4 |
6.0 4.3 |
A |
Pulsed Drain Current (tp 10 s) |
IDM | 30 | A | |
Continuous Source−Diode Conduction (Note 1) |
Is | 2.9 | 1.4 | A |
Total Power Dissipation (Note 1) TA = 25°C TA = 85°C |
PD | 3.2 1.7 |
1.5 0.79 |
W |
Operating Junction and Storage Temperature Range |
TJ, Tstg | −55 to 150 | °C | |
Thermal Resistance (Note 1) Junction−to−Ambient |
RJA | 38 | 82 | °C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. When surface mounted to 1 x 1 FR−4 board.
NTLTD7900ZR2 are an advanced series of Power MOSFETs which contain monolithic back−to−back Zener diodes. These Zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs NTLTD7900ZR2 feature ultra low RDS(on) and true logic level performance. EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications of NTLTD7900ZR2 are DC−DC converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.