MOSFET 20V 9A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 6 A | ||
Resistance Drain-Source RDS (on) : | 26 mOhms at 4.5 V | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DFN EP | Packaging : | Reel |
Technical/Catalog Information | NTLTD7900ZR2G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 6A |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 6.5A, 4.5V |
Input Capacitance (Ciss) @ Vds | 15pF @ 16V |
Power - Max | 1.5W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 18nC @ 4.5V |
Package / Case | Micro-8 Leadless |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTLTD7900ZR2G NTLTD7900ZR2G NTLTD7900ZR2GOSTR ND NTLTD7900ZR2GOSTRND NTLTD7900ZR2GOSTR |