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NTLTD7900ZR2G

MOSFET 20V 9A N-Channel

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SeekIC No. : 00160503 Detail

NTLTD7900ZR2G: MOSFET 20V 9A N-Channel

NTLTD7900ZR2G Data Sheet

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Part Number:
NTLTD7900ZR2G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 26 mOhms at 4.5 V Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DFN EP Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 6 A
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : DFN EP
Resistance Drain-Source RDS (on) : 26 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTLTD7900ZR2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs26 mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) @ Vds 15pF @ 16V
Power - Max1.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs18nC @ 4.5V
Package / CaseMicro-8 Leadless
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTLTD7900ZR2G
NTLTD7900ZR2G
NTLTD7900ZR2GOSTR ND
NTLTD7900ZR2GOSTRND
NTLTD7900ZR2GOSTR



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