MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:WDFN6, 2x2, 0.65P D/C:06+
NTLJD3115PTAG, NTLJD3119C, NTLJD3119CTAG Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: WDFN6, 2x2, 0.65P
D/C: 06+
Description: MOSFET N/P-CH 20V 4.6/4.1A 6WDFN
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PDF/DataSheet Download
Datasheet: NTL4502N
File Size: 86016 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTLJD3119CTAG
File Size: 177957 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTLJD3119CTAG
File Size: 177957 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NTLJD3115PTAG |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.3A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 531pF @ 10V |
| Power - Max | 710mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 6.2nC @ 4.5V |
| Package / Case | 6-WDFN |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTLJD3115PTAG NTLJD3115PTAG |
| Parameter | Symbol | Value | Unit | ||
| Drain−to−Source Voltage | N−Ch | VDSS | 20 | V | |
| P−Ch | -20 | ||||
| Gate−to−Source Voltage | N−Ch | VGS | ±8.0 | V | |
| P−Ch | |||||
| N−Channel Continuous Drain Current (Note 1) |
Steady State |
TA = 25°C | ID | 3.8 | A |
| TA = 85°C | 2.8 | ||||
| t 5 s | TA = 25°C | 4.6 | |||
| P−Channel Continuous Drain Current (Note 1) |
Steady State |
TA = 25°C | ID | -3.3 | A |
| TA = 85°C | -2.4 | ||||
| t 5 s | TA = 25°C | -4.1 | |||
| Power Dissipation (Note 1) |
Steady State |
TA = 25°C | PD | 1.5 | W |
| t 5 s | 2.3 | ||||
| N−Channel Continuous Drain Current (Note 2) |
Steady State |
TA = 25°C | ID | 2.6 | A |
| 1.9 | |||||
| P−Channel Continuous Drain Current (Note 2) |
Steady State |
TA = 25°C | ID | -2.3 | A |
| -1.6 | |||||
| Power Dissipation (Note 2) |
Steady State |
TA = 25°C | PD | 0.71 | W |
| Pulsed Drain Current | N−Ch | tp = 10s | IDM | 18 | A |
| P−Ch | -20 | ||||
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to 150 |
|||
| Lead Temperature for Soldering Purposes (1/8 from case for 10 s) |
TL | 260 | |||
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu.
| Technical/Catalog Information | NTLJD3119CTAG |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.6A, 2.3A |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.8A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 271pF @ 10V |
| Power - Max | 710mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 3.7nC @ 4.5V |
| Package / Case | 6-WDFN |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTLJD3119CTAG NTLJD3119CTAG |
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