Position: Home  > All Categories> Integrated Circuits (ICs) > NTLJD3119C

NTLJD3119C

Features: • Complementary N−Channel and P−Channel MOSFET• WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction• Footprint Same as SC−88 Package• Leading Edge Trench Technology for Low On Resistance• 1.8 V Gate Threshold Voltage•...

product image

NTLJD3119C Picture
See larger image
SeekIC No. : 004436676 Detail

NTLJD3119C: Features: • Complementary N−Channel and P−Channel MOSFET• WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction• Footprint Same as SC−88 Package...

NTLJD3119C Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NTLJD3119C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Complementary N−Channel and P−Channel MOSFET
• WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction
• Footprint Same as SC−88 Package
• Leading Edge Trench Technology for Low On Resistance
• 1.8 V Gate Threshold Voltage
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• This is a Pb−Free Device


Application

• Synchronous DC−DC Conversion Circuits
• Load/Power Management of Portable Devices like PDA's, Cellular Phones and Hard Drives
• Color Display and Camera Flash Regulators


Specifications

Parameter Symbol Value Unit
Drain−to−Source Voltage N−Ch VDSS 20 V
P−Ch -20
Gate−to−Source Voltage N−Ch VGS ±8.0 V
P−Ch
N−Channel
Continuous Drain
Current (Note 1)		 Steady
State		 TA = 25°C ID 3.8 A
TA = 85°C 2.8
t 5 s TA = 25°C 4.6
P−Channel
Continuous Drain
Current (Note 1)		 Steady
State		 TA = 25°C ID -3.3 A
TA = 85°C -2.4
t 5 s TA = 25°C -4.1
Power Dissipation
(Note 1)		 Steady
State		 TA = 25°C PD 1.5 W
t 5 s 2.3
N−Channel
Continuous Drain
Current (Note 2)		 Steady
State		 TA = 25°C ID 2.6 A
  1.9
P−Channel
Continuous Drain
Current (Note 2)		 Steady
State		 TA = 25°C ID -2.3 A
  -1.6
Power Dissipation
(Note 2)		 Steady
State		 TA = 25°C PD 0.71 W
Pulsed Drain Current N−Ch tp = 10s IDM 18 A
P−Ch -20
Operating Junction and Storage Temperature TJ, TSTG −55 to
150
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)		     TL 260

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tapes, Adhesives
803
AC452-2
Prototyping Products
AVT4168
DE1
Kits
IT243
UVSC-110-4E1
LED Products
LM24P20
KCG057QV1DB-G770
Tools
TCP202
G084SN05 V.3
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
View more