IXBF9N140, IXBF9N160, IXBH20N160 Selling Leads, Datasheet
MFG:IXYS Package Cooled:09+ D/C:TO-
IXBF9N140, IXBF9N160, IXBH20N160 Datasheet download
Part Number: IXBF9N140
MFG: IXYS
Package Cooled: 09+
D/C: TO-
IXBF9N140, IXBF9N160, IXBH20N160
- Table of contents:
Info of IXBF9N140
Info of IXBF9N160
Info of IXBH20N160
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About IXBF9N140
PDF/DataSheet Download
Datasheet: IXBF9N140
File Size: 93193 KB
Manufacturer: IXYS [IXYS Corporation]
Download : Click here to Download
About IXBF9N160
PDF/DataSheet Download
Datasheet: IXBF9N160
File Size: 93193 KB
Manufacturer: IXYS [IXYS Corporation]
Download : Click here to Download
About IXBH20N160
PDF/DataSheet Download
Datasheet: IXBH20N160
File Size: 63250 KB
Manufacturer: IXYS [IXYS Corporation]
Download : Click here to Download
IXBF9N140 Maximum Ratings
| Symbol | Conditions | Maximum | Ratings | |
| VCES | TVJ = 25°C to 150°C | IXBF 9N140 | 1400 | V |
| IXBF 9N160 | 1600 | V | ||
| VGES | ±20 | V | ||
| IC25 | TC = 25°C | 7 | A | |
| IC90 | TC = 90°C | 4 | A | |
| ICM | VGE = 15/0 V; RG = 100; TVJ = 125°C | 12 | A | |
| VCEK | RBSOA, Clamped inductive load; L = 100 µH | 0.8VCES | A | |
| Ptot | TC = 25°C | 70 | W |
IXBF9N140 Features
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs with significantly lower voltage drop
- fast switching for high frequency operation
- reverse conduction capability
• ISOPLUS i4-PACTM high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- substitute for high voltage MOSFETs with significantly lower voltage drop
- fast switching for high frequency operation
- reverse conduction capability
• ISOPLUS i4-PACTM high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability
- industry standard outline
IXBF9N140 Typical Application
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
IXBF9N160 Maximum Ratings
| Symbol | Conditions | Maximum | Ratings | |
| VCES | TVJ = 25°C to 150°C | IXBF 9N140 | 1400 | V |
| IXBF 9N160 | 1600 | V | ||
| VGES | ±20 | V | ||
| IC25 | TC = 25°C | 7 | A | |
| IC90 | TC = 90°C | 4 | A | |
| ICM | VGE = 15/0 V; RG = 100; TVJ = 125°C | 12 | A | |
| VCEK | RBSOA, Clamped inductive load; L = 100 µH | 0.8VCES | A | |
| Ptot | TC = 25°C | 70 | W |
IXBF9N160 Features
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs with significantly lower voltage drop
- fast switching for high frequency operation
- reverse conduction capability
• ISOPLUS i4-PACTM high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- substitute for high voltage MOSFETs with significantly lower voltage drop
- fast switching for high frequency operation
- reverse conduction capability
• ISOPLUS i4-PACTM high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability
- industry standard outline
IXBF9N160 Typical Application
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
IXBH20N160 Maximum Ratings
| Symbol | Conditions | Maximum | Ratings | |
| 20N140 | 20N160 | |||
| VCES | TJ = 25 to 150 | 1400 | 1600 | v |
| VCGR | TJ = 25 to 150; RGE = 1 | 1400 | 1600 | v |
| VGES | Continuous | ±20 | V | |
| VGEM | ±30 | V | ||
| IC25 | TC = 25, | 20 | A | |
| IC90 | TC = 90 | 13 | A | |
| ICM | TC = 25°C, 1 ms | 26 | A | |
| SSOA (RBSOA) |
VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES Clamped inductive load, L = 100 H |
ICM =24 | A | |
| PC | TC = 25 | 200 | W | |
| TJ | -55 ... +150 | |||
| TJM | 150 | |||
| Tstg | -55 ... +150 | |||
| TL | 1.6 mm (0.063 in) from case for 10 s | 300 | ||
| Md | Mounting torque | 1.15/10 | Nm/lb.in. | |
| Weight | 6 | g | ||
IXBH20N160 Features
• International standard package JEDEC TO-247 AD
• High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• MOS Gate turn-on
- drive simplicity
• Reverse conducting capability
• High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• MOS Gate turn-on
- drive simplicity
• Reverse conducting capability
IXBH20N160 Typical Application
• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• CRT deflection
• Lamp ballasts
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• CRT deflection
• Lamp ballasts
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