IGBT Transistors 1600V 33A
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1600 V |
| Maximum Gate Emitter Voltage : | 20 V | Power Dissipation : | 350 W |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247AD-3 |
| Packaging : | Tube |
|
Symbol |
Conditions |
Maximum Ratings | ||
|
40N140 |
40N160 |
|||
|
VCES |
TJ = 25 to 150 |
1400 |
1600 |
V |
|
VCGR |
TJ = 25 to 150; RGE = 1 M |
1400 |
1600 |
V |
|
VGES |
Continuous |
±20 |
V | |
|
VGEM |
Transient |
±30 |
V | |
|
IC25 |
TC = 25, |
33 |
A | |
|
IC90 |
TC = 90 |
20 |
A | |
|
ICM |
TC = 25, 1ms |
40 |
A | |
|
SSOA (RBSOA) |
VGE= 15V,TVJ=125,RG =22 VCE=0.8•VCES Clamped inductive load,L = 100H |
ICM = 40 |
A | |
|
PC |
TC = 25 |
350 |
W | |
|
TJ |
-55 ... +150 |
|||
|
TJM |
150 |
|||
|
Tstg |
-55 ... +150 |
|||
|
TL |
1.6 mm (0.063 in) from case for 10 s |
300 |
||
|
Md |
Mounting torque |
1.15/10 |
Nm/lb.in. | |
|
Weight |
6 |
g | ||
| Technical/Catalog Information | IXBH40N160 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1600V |
| Current - Collector (Ic) (Max) | 33A |
| Vce(on) (Max) @ Vge, Ic | 7.1V @ 15V, 20A |
| Power - Max | 350W |
| Mounting Type | Through Hole |
| Package / Case | TO-247AD |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXBH40N160 IXBH40N160 |